Koupit IPD053N08N3GBTMA1 s BYCHPS
Koupit se zárukou
IPD053N08N3GBTMA1
- Part Number:
- IPD053N08N3GBTMA1
- Popis:
- MOSFET N-CH 80V 90A TO252-3
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 17506 Pieces
- Datový list:
- IPD053N08N3GBTMA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPD053N08N3GBTMA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPD053N08N3GBTMA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3.5V @ 90µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO252-3 |
| Série: | OptiMOS™ |
| RDS On (Max) @ Id, Vgs: | 5.3 mOhm @ 90A, 10V |
| Ztráta energie (Max): | 150W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Ostatní jména: | IPD053N08N3 G IPD053N08N3 G-ND IPD053N08N3 GTR-ND IPD053N08N3G SP000395183 |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | IPD053N08N3GBTMA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 4750pF @ 40V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 69nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 80V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3 |
| Drain na zdroj napětí (Vdss): | 80V |
| Popis: | MOSFET N-CH 80V 90A TO252-3 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 90A (Tc) |
| Email: | [email protected] |
Související díly pro IPD053N08N3GBTMA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPD050N03LGATMA1 | Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | Dotaz |
 |
IRFRC20TR | Vishay Siliconix | MOSFET N-CH 600V 2A DPAK | Dotaz |
 |
TK11A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11A TO-220SIS | Dotaz |
|
IPD053N08N3GATMA1 | Infineon Technologies | MOSFET N-CH 80V 90A TO252-3 | Dotaz |
 |
SUM70N03-09CP-E3 | Vishay Siliconix | MOSFET N-CH 30V 70A D2PAK | Dotaz |
|
IPD053N06N3GBTMA1 | Infineon Technologies | MOSFET N-CH 60V 90A TO252-3 | Dotaz |
|
IPD05N03LA G | Infineon Technologies | MOSFET N-CH 25V 50A DPAK | Dotaz |
|
IPD053N06NATMA1 | Infineon Technologies | MOSFET N-CH 60V 18A TO252-3 | Dotaz |
|
IPD05N03LB G | Infineon Technologies | MOSFET N-CH 30V 90A DPAK | Dotaz |
 |
DMP2007UFG-13 | Diodes Incorporated | MOSFET P-CH 20V 18A PWRDI3333-8 | Dotaz |
|
IRL3705ZSPBF | Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | Dotaz |
 |
IPD050N03LGBTMA1 | Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | Dotaz |
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