Koupit IPD053N06N3GBTMA1 s BYCHPS
Koupit se zárukou
IPD053N06N3GBTMA1
- Part Number:
- IPD053N06N3GBTMA1
- Popis:
- MOSFET N-CH 60V 90A TO252-3
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 19149 Pieces
- Datový list:
- IPD053N06N3GBTMA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPD053N06N3GBTMA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPD053N06N3GBTMA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 58µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO252-3 |
| Série: | OptiMOS™ |
| RDS On (Max) @ Id, Vgs: | 5.3 mOhm @ 90A, 10V |
| Ztráta energie (Max): | 115W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Ostatní jména: | IPD053N06N3 G IPD053N06N3 G-ND IPD053N06N3 GTR-ND SP000453318 |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | IPD053N06N3GBTMA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 6600pF @ 30V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 82nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 60V 90A (Tc) 115W (Tc) Surface Mount PG-TO252-3 |
| Drain na zdroj napětí (Vdss): | 60V |
| Popis: | MOSFET N-CH 60V 90A TO252-3 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 90A (Tc) |
| Email: | [email protected] |
Související díly pro IPD053N06N3GBTMA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
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IPD053N08N3GBTMA1 | Infineon Technologies | MOSFET N-CH 80V 90A TO252-3 | Dotaz |
|
IPD053N08N3GATMA1 | Infineon Technologies | MOSFET N-CH 80V 90A TO252-3 | Dotaz |
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IXTT88N30P | IXYS | MOSFET N-CH 300V 88A TO-268 | Dotaz |
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IPD050N03LGBTMA1 | Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | Dotaz |
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ZXMP6A16GTA | Diodes Incorporated | MOSFET P-CH SOT223 | Dotaz |
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SI4435DY | Infineon Technologies | MOSFET P-CH 30V 8A 8-SOIC | Dotaz |
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NVD5413NT4G | ON Semiconductor | MOSFET N-CH 60V 30A DPAK | Dotaz |
|
IPD05N03LB G | Infineon Technologies | MOSFET N-CH 30V 90A DPAK | Dotaz |
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IRF1010NSTRRPBF | Infineon Technologies | MOSFET N-CH 55V 85A D2PAK | Dotaz |
|
IPD053N06NATMA1 | Infineon Technologies | MOSFET N-CH 60V 18A TO252-3 | Dotaz |
|
IPD050N03LGATMA1 | Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | Dotaz |
|
IPD05N03LA G | Infineon Technologies | MOSFET N-CH 25V 50A DPAK | Dotaz |
 |
IXTF230N085T | IXYS | MOSFET N-CH 85V 130A ISOPLUS I4 | Dotaz |
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