Koupit IPD053N06NATMA1 s BYCHPS
Koupit se zárukou
IPD053N06NATMA1
- Part Number:
- IPD053N06NATMA1
- Popis:
- MOSFET N-CH 60V 18A TO252-3
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 12296 Pieces
- Datový list:
- IPD053N06NATMA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPD053N06NATMA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPD053N06NATMA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2.8V @ 36µA |
|---|---|
| Vgs (Max): | ±20V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO252-3 |
| Série: | OptiMOS™ |
| RDS On (Max) @ Id, Vgs: | 5.3 mOhm @ 45A, 10V |
| Ztráta energie (Max): | 3W (Ta), 83W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Ostatní jména: | IPD053N06N IPD053N06NATMA1TR IPD053N06NTR IPD053N06NTR-ND IPD053N06NXTMA1 SP000962138 |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 14 Weeks |
| Výrobní číslo výrobce: | IPD053N06NATMA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 2000pF @ 30V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 27nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 60V 18A (Ta), 45A (Tc) 3W (Ta), 83W (Tc) Surface Mount PG-TO252-3 |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 6V, 10V |
| Drain na zdroj napětí (Vdss): | 60V |
| Popis: | MOSFET N-CH 60V 18A TO252-3 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 18A (Ta), 45A (Tc) |
| Email: | [email protected] |
Související díly pro IPD053N06NATMA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPD053N08N3GATMA1 | Infineon Technologies | MOSFET N-CH 80V 90A TO252-3 | Dotaz |
 |
IXTQ88N30P | IXYS | MOSFET N-CH 300V 88A TO-3P | Dotaz |
|
IPD053N08N3GBTMA1 | Infineon Technologies | MOSFET N-CH 80V 90A TO252-3 | Dotaz |
|
IPD05N03LA G | Infineon Technologies | MOSFET N-CH 25V 50A DPAK | Dotaz |
 |
FQB5N60CTM_WS | Fairchild/ON Semiconductor | MOSFET N-CH 600V 4.5A | Dotaz |
|
IPD053N06N3GBTMA1 | Infineon Technologies | MOSFET N-CH 60V 90A TO252-3 | Dotaz |
|
IPD050N03LGATMA1 | Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | Dotaz |
|
IPD05N03LB G | Infineon Technologies | MOSFET N-CH 30V 90A DPAK | Dotaz |
 |
IRF7424TRPBF | Infineon Technologies | MOSFET P-CH 30V 11A 8-SOIC | Dotaz |
 |
IRF644NSTRL | Vishay Siliconix | MOSFET N-CH 250V 14A D2PAK | Dotaz |
 |
IPD050N03LGBTMA1 | Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | Dotaz |
 |
NILMS4501NR2 | ON Semiconductor | MOSFET N-CH 24V 9.5A 4-LLP | Dotaz |
 |
IRF6797MTR1PBF | Infineon Technologies | MOSFET N-CH 25V 36A DIRECTFET | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers