Koupit SQM120N10-3M8_GE3 s BYCHPS
Koupit se zárukou
SQM120N10-3M8_GE3
- Part Number:
- SQM120N10-3M8_GE3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET N-CH 100V 120A TO263
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16224 Pieces
- Datový list:
- SQM120N10-3M8_GE3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SQM120N10-3M8_GE3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SQM120N10-3M8_GE3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-263 (D²Pak) |
| Série: | Automotive, AEC-Q101, TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 3.8 mOhm @ 20A, 10V |
| Ztráta energie (Max): | 375W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Provozní teplota: | -55°C ~ 175°C (TA) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 18 Weeks |
| Výrobní číslo výrobce: | SQM120N10-3M8_GE3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 7230pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 190nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak) |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 10V |
| Drain na zdroj napětí (Vdss): | 100V |
| Popis: | MOSFET N-CH 100V 120A TO263 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 120A (Tc) |
| Email: | [email protected] |
Související díly pro SQM120N10-3M8_GE3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
FQD3N30TM | Fairchild/ON Semiconductor | MOSFET N-CH 300V 2.4A DPAK | Dotaz |
 |
SIB408DK-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 7A PPAK SC75-6L | Dotaz |
 |
SQM120N06-3M5L_GE3 | Vishay Siliconix | MOSFET N-CH 60V 120A TO-220 | Dotaz |
 |
NDS331N_D87Z | Fairchild/ON Semiconductor | MOSFET N-CH 20V 1.3A 3SSOT | Dotaz |
 |
IPP041N12N3 G | Infineon Technologies | MOSFET N-CH 120V 120A TO220-3 | Dotaz |
|
SQM120P06-07L_GE3 | Vishay Siliconix | MOSFET P-CH 60V 120A TO263 | Dotaz |
|
SQM120N03-1M5L_GE3 | Vishay Siliconix | MOSFET N-CH 30V 120A TO-263 | Dotaz |
|
IPP100N04S2L03AKSA2 | Infineon Technologies | MOSFET N-CH 40V 100A TO220-3 | Dotaz |
 |
AUIRFU3607 | Infineon Technologies | MOSFET N CH 75V 56A I-PAK | Dotaz |
|
SQM120N04-1M7_GE3 | Vishay Siliconix | MOSFET N-CH 40V 120A TO263 | Dotaz |
|
SQM120N04-1M9_GE3 | Vishay Siliconix | MOSFET N-CH 40V 120A TO263 | Dotaz |
|
SQM120P04-04L_GE3 | Vishay Siliconix | MOSFET P-CH 40V 120A TO-263 | Dotaz |
|
SQM120N04-1M7L_GE3 | Vishay Siliconix | MOSFET N-CH 40V 120A TO263 | Dotaz |
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