Koupit SCT2H12NYTB s BYCHPS
Koupit se zárukou
SCT2H12NYTB
- Part Number:
- SCT2H12NYTB
- Výrobce:
- LAPIS Semiconductor
- Popis:
- 1700V 1.2 OHM 4A SIC FET
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 17087 Pieces
- Datový list:
- SCT2H12NYTB.pdf
Úvod
BYCHIPS je distribuční odrůda pro SCT2H12NYTB, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SCT2H12NYTB e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 410µA |
|---|---|
| Vgs (Max): | +22V, -6V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-268 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 1.5 Ohm @ 1.1A, 18V |
| Ztráta energie (Max): | 44W (Tc) |
| Obal: | Original-Reel® |
| Paket / krabice: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Ostatní jména: | SCT2H12NYTBDKR |
| Provozní teplota: | 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 15 Weeks |
| Výrobní číslo výrobce: | SCT2H12NYTB |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 184pF @ 800V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 14nC @ 18V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 1700V (1.7kV) 4A (Tc) 44W (Tc) Surface Mount TO-268 |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 18V |
| Drain na zdroj napětí (Vdss): | 1700V (1.7kV) |
| Popis: | 1700V 1.2 OHM 4A SIC FET |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 4A (Tc) |
| Email: | [email protected] |
Související díly pro SCT2H12NYTB
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IRFBC40L | Vishay Siliconix | MOSFET N-CH 600V 6.2A TO-262 | Dotaz |
 |
NTP22N06L | ON Semiconductor | MOSFET N-CH 60V 22A TO220AB | Dotaz |
 |
STB155N3LH6 | STMicroelectronics | MOSFET N-CH 30V 80A D2PAK | Dotaz |
 |
SCT2H12NZGC11 | Rohm Semiconductor | MOSFET N-CH 1700V 3.7A | Dotaz |
 |
STP45NE06 | STMicroelectronics | MOSFET N-CH 60V 45A TO-220 | Dotaz |
 |
IRFZ44E | Infineon Technologies | MOSFET N-CH 60V 48A TO-220AB | Dotaz |
 |
IXFN230N10 | IXYS | MOSFET N-CH 100V 230A SOT-227B | Dotaz |
 |
IRF7240PBF | Infineon Technologies | MOSFET P-CH 40V 10.5A 8-SOIC | Dotaz |
 |
SI2316BDS-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 4.5A SOT-23 | Dotaz |
 |
NVMFS5C682NLWFT1G | ON Semiconductor | MOSFET N-CH 60V SO8FL | Dotaz |
 |
SKI03036 | Sanken | MOSFET N-CH 30V 80A TO-263 | Dotaz |
 |
DMG6968U-7 | Diodes Incorporated | MOSFET N-CH 20V 6.5A SOT-23 | Dotaz |
 |
AOTF12N65A | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 12A TO220F | Dotaz |
 |
BUK7909-75AIE,127 | Nexperia USA Inc. | MOSFET N-CH 75V 75A TO220AB | Dotaz |
 |
IRFP21N60LPBF | Vishay Siliconix | MOSFET N-CH 600V 21A TO-247AC | Dotaz |
 |
IXFQ26N50 | IXYS | MOSFET N-CH 500V 26A TO-30 | Dotaz |
 |
IXFT12N100 | IXYS | MOSFET N-CH 1000V 12A TO-268 | Dotaz |
 |
IPB025N08N3 G | Infineon Technologies | MOSFET N-CH 80V 120A TO263-3 | Dotaz |
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