Koupit NTB125N02RT4G s BYCHPS
Koupit se zárukou
NTB125N02RT4G
- Part Number:
- NTB125N02RT4G
- Popis:
- MOSFET N-CH 24V 15.9A D2PAK
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16384 Pieces
- Datový list:
- NTB125N02RT4G.pdf
Úvod
BYCHIPS je distribuční odrůda pro NTB125N02RT4G, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu NTB125N02RT4G e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | D2PAK |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 4.6 mOhm @ 20A, 10V |
| Ztráta energie (Max): | 1.98W (Ta), 113.6W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Ostatní jména: | NTB125N02RT4GOS |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | NTB125N02RT4G |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 3440pF @ 20V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 28nC @ 4.5V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 24V 95A (Ta), 120.5A (Tc) 1.98W (Ta), 113.6W (Tc) Surface Mount D2PAK |
| Drain na zdroj napětí (Vdss): | 24V |
| Popis: | MOSFET N-CH 24V 15.9A D2PAK |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 95A (Ta), 120.5A (Tc) |
| Email: | [email protected] |
Související díly pro NTB125N02RT4G
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
MCH6431-TL-H | ON Semiconductor | MOSFET N-CH 30V 5A MCPH6 | Dotaz |
 |
VMO550-01F | IXYS | MOSFET N-CH 100V 590A Y3-DCB | Dotaz |
 |
NTB125N02RG | ON Semiconductor | MOSFET N-CH 24V 15.9A D2PAK | Dotaz |
 |
APT11F80B | Microsemi Corporation | MOSFET N-CH 800V 12A TO-247 | Dotaz |
|
NTB125N02RT4 | ON Semiconductor | MOSFET N-CH 24V 15.9A D2PAK | Dotaz |
|
NTB125N02R | ON Semiconductor | MOSFET N-CH 24V 15.9A D2PAK | Dotaz |
 |
DMN601WKQ-7 | Diodes Incorporated | MOSFET N-CH 60V 300MA SOT323 | Dotaz |
 |
STB20N90K5 | STMicroelectronics | N-CHANNEL 900 V, 0.24 OHM TYP., | Dotaz |
 |
IPP90N06S404AKSA2 | Infineon Technologies | MOSFET N-CH 60V 90A PG-TO220-3 | Dotaz |
 |
C3M0280090J-TR | Cree/Wolfspeed | MOSFET N-CH 900V 11A | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog