Koupit NDD60N550U1T4G s BYCHPS
Koupit se zárukou
NDD60N550U1T4G
- Part Number:
- NDD60N550U1T4G
- Popis:
- MOSFET N-CH 600V 8.2A DPAK-3
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16087 Pieces
- Datový list:
- NDD60N550U1T4G.pdf
Úvod
BYCHIPS je distribuční odrůda pro NDD60N550U1T4G, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu NDD60N550U1T4G e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | DPAK |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 550 mOhm @ 4A, 10V |
| Ztráta energie (Max): | 94W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 3 (168 Hours) |
| Výrobní standardní doba výroby: | 16 Weeks |
| Výrobní číslo výrobce: | NDD60N550U1T4G |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 540pF @ 50V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 18nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 600V 8.2A (Tc) 94W (Tc) Surface Mount DPAK |
| Drain na zdroj napětí (Vdss): | 600V |
| Popis: | MOSFET N-CH 600V 8.2A DPAK-3 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 8.2A (Tc) |
| Email: | [email protected] |
Související díly pro NDD60N550U1T4G
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
NDD60N550U1-35G | ON Semiconductor | MOSFET N-CH 600V 8.2A IPAK-3 | Dotaz |
 |
NDD60N745U1T4G | ON Semiconductor | MOSFET N-CH 600V 6.8A DPAK-3 | Dotaz |
|
NDD60N360U1-1G | ON Semiconductor | MOSFET N-CH 600V 114A IPAK | Dotaz |
|
NDD60N900U1-35G | ON Semiconductor | MOSFET N-CH 600V 5.9A IPAK-3 | Dotaz |
 |
BSF024N03LT3GXUMA1 | Infineon Technologies | MOSFET N-CH 30V 106A 2WDSON | Dotaz |
|
NDD60N550U1-1G | ON Semiconductor | MOSFET N-CH 600V 8.2A IPAK-4 | Dotaz |
|
NDD60N360U1T4G | ON Semiconductor | MOSFET N-CH 600V 114A DPAK | Dotaz |
|
NDD60N900U1-1G | ON Semiconductor | MOSFET N-CH 600V 5.9A IPAK-4 | Dotaz |
|
NDD60N360U1-35G | ON Semiconductor | MOSFET N-CH 600V 114A IPAK | Dotaz |
|
NDD60N900U1T4G | ON Semiconductor | MOSFET N-CH 600V 5.9A DPAK-3 | Dotaz |
|
NDD60N745U1-1G | ON Semiconductor | MOSFET N-CH 600V 6.8A IPAK-4 | Dotaz |
|
NDD60N745U1-35G | ON Semiconductor | MOSFET N-CH 600V 6.8A IPAK-3 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers