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IRFB9N65A
- Part Number:
- IRFB9N65A
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET N-CH 650V 8.5A TO-220AB
- Stav volného vedení / RoHS:
- Obsahuje olověný / RoHS neodpovídající
- dostupné množství:
- 18310 Pieces
- Datový list:
- 1.IRFB9N65A.pdf2.IRFB9N65A.pdf
Úvod
BYCHIPS je distribuční odrůda pro IRFB9N65A, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IRFB9N65A e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-220AB |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 930 mOhm @ 5.1A, 10V |
| Ztráta energie (Max): | 167W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-220-3 |
| Ostatní jména: | *IRFB9N65A |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | IRFB9N65A |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 1417pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 48nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 650V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB |
| Drain na zdroj napětí (Vdss): | 650V |
| Popis: | MOSFET N-CH 650V 8.5A TO-220AB |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 8.5A (Tc) |
| Email: | [email protected] |
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|---|---|---|---|---|
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IRFB9N65APBF | Vishay Siliconix | MOSFET N-CH 650V 8.5A TO-220AB | Dotaz |
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STH270N8F7-6 | STMicroelectronics | MOSFET N-CH 80V 180A H2PAK-6 | Dotaz |
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IRFB9N30APBF | Vishay Siliconix | MOSFET N-CH 300V 9.3A TO-220AB | Dotaz |
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IRL3716STRRPBF | Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | Dotaz |
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FDP8441_F085 | Fairchild/ON Semiconductor | MOSFET N-CH 40V 80A TO-220AB | Dotaz |
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