Koupit IPD80N04S3-06 s BYCHPS
Koupit se zárukou
IPD80N04S3-06
- Part Number:
- IPD80N04S3-06
- Popis:
- MOSFET N-CH 40V 90A TO252-3
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 13145 Pieces
- Datový list:
- IPD80N04S3-06.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPD80N04S3-06, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPD80N04S3-06 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 52µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO252-3 |
| Série: | OptiMOS™ |
| RDS On (Max) @ Id, Vgs: | 5.2 mOhm @ 80A, 10V |
| Ztráta energie (Max): | 100W (Tc) |
| Obal: | Original-Reel® |
| Paket / krabice: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Ostatní jména: | IPD80N04S3-06DKR IPD80N04S3-06DKR-ND |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | IPD80N04S3-06 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 3250pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 47nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 40V 90A (Tc) 100W (Tc) Surface Mount PG-TO252-3 |
| Drain na zdroj napětí (Vdss): | 40V |
| Popis: | MOSFET N-CH 40V 90A TO252-3 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 90A (Tc) |
| Email: | [email protected] |
Související díly pro IPD80N04S3-06
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPD80P03P4L07ATMA1 | Infineon Technologies | MOSFET P-CH 30V 80A TO252-3 | Dotaz |
|
IPD80N06S3-09 | Infineon Technologies | MOSFET N-CH 55V 80A TO252-3 | Dotaz |
|
IPD80R1K4CEATMA1 | Infineon Technologies | MOSFET N-CH 800V 3.9A TO252-3 | Dotaz |
 |
IPD80N04S306BATMA1 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | Dotaz |
 |
IPD80R4K5P7ATMA1 | Infineon Technologies | MOSFET N-CH 800V 1.5A DPAK | Dotaz |
|
IPD80N04S306ATMA1 | Infineon Technologies | MOSFET N-CH 40V 90A TO252-3 | Dotaz |
|
IPD80R1K4P7ATMA1 | Infineon Technologies | MOSFET N-CH 800V 4A DPAK | Dotaz |
|
IPD80R2K8CEATMA1 | Infineon Technologies | MOSFET N-CH 800V 1.9A TO252-3 | Dotaz |
|
IPD80R280P7ATMA1 | Infineon Technologies | MOSFET N-CH 800V 17A TO252 | Dotaz |
|
IPD80R2K8CEBTMA1 | Infineon Technologies | MOSFET N-CH 800V 1.9A TO252-3 | Dotaz |
|
IPD80R450P7ATMA1 | Infineon Technologies | MOSFET N-CH 800V 11A DPAK | Dotaz |
|
IPD800N06NGBTMA1 | Infineon Technologies | MOSFET N-CH 60V 16A TO-252 | Dotaz |
|
IPD80R1K0CEATMA1 | Infineon Technologies | MOSFET N-CH 800V 5.7A TO252-3 | Dotaz |
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