Koupit DMN10H099SFG-13 s BYCHPS
Koupit se zárukou
DMN10H099SFG-13
- Part Number:
- DMN10H099SFG-13
- Výrobce:
- Diodes Incorporated
- Popis:
- MOSFET N-CH 100V 4.2A
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 12474 Pieces
- Datový list:
- DMN10H099SFG-13.pdf
Úvod
BYCHIPS je distribuční odrůda pro DMN10H099SFG-13, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu DMN10H099SFG-13 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PowerDI3333-8 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 80 mOhm @ 3.3A, 10V |
| Ztráta energie (Max): | 980mW (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | 8-PowerWDFN |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 16 Weeks |
| Výrobní číslo výrobce: | DMN10H099SFG-13 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 1172pF @ 50V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 25.2nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 100V 4.2A (Ta) 980mW (Ta) Surface Mount PowerDI3333-8 |
| Drain na zdroj napětí (Vdss): | 100V |
| Popis: | MOSFET N-CH 100V 4.2A |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 4.2A (Ta) |
| Email: | [email protected] |
Související díly pro DMN10H099SFG-13
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
DMN10H120SE-13 | Diodes Incorporated | MOSFET N-CH 100V 3.6A SOT223 | Dotaz |
 |
DMN10H099SK3-13 | Diodes Incorporated | MOSFET N-CH 100V 17A TO252 | Dotaz |
 |
DMN1019UVT-13 | Diodes Incorporated | MOSFET N-CH 12V 10.7A TSOT26 | Dotaz |
 |
DMN10H099SFG-7 | Diodes Incorporated | MOSFET N-CH 100V 4.2A PWRDI3333 | Dotaz |
 |
DMN10H700S-13 | Diodes Incorporated | MOSFET NCH 100V 700MA SOT23 | Dotaz |
 |
DMN1019USN-13 | Diodes Incorporated | MOSFET N-CH 12V 9.3A SC59 | Dotaz |
|
DMN10H170SFG-7 | Diodes Incorporated | MOSFET N-CH 100V 2.9A POWERDI | Dotaz |
 |
DMN1029UFDB-7 | Diodes Incorporated | MOSFET 2N-CH 12V 5.6A 6UDFN | Dotaz |
 |
DMN1019UFDE-7 | Diodes Incorporated | MOSFET N CH 12V 11A U-DFN2020-6E | Dotaz |
|
DMN10H170SVTQ-13 | Diodes Incorporated | MOSFET N-CH 100V TSOT26 | Dotaz |
|
DMN10H120SFG-7 | Diodes Incorporated | MOSFET N-CH 100V 3.8A POWERDI | Dotaz |
|
DMN1019UVT-7 | Diodes Incorporated | MOSFET N-CH 12V 10.7A TSOT26 | Dotaz |
|
DMN10H170SFG-13 | Diodes Incorporated | MOSFET N-CH 100V 2.9A POWERDI | Dotaz |
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