Koupit APT20M38SVRG/TR s BYCHPS
Koupit se zárukou
APT20M38SVRG/TR
- Part Number:
- APT20M38SVRG/TR
- Výrobce:
- Microsemi
- Popis:
- MOSFET N-CH 200V 67A D3PAK
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 17017 Pieces
- Datový list:
- APT20M38SVRG/TR.pdf
Úvod
BYCHIPS je distribuční odrůda pro APT20M38SVRG/TR, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu APT20M38SVRG/TR e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 1mA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | D3Pak |
| Série: | POWER MOS V® |
| RDS On (Max) @ Id, Vgs: | 38 mOhm @ 33.5A, 10V |
| Ztráta energie (Max): | 370W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 22 Weeks |
| Výrobní číslo výrobce: | APT20M38SVRG/TR |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 6120pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 225nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 200V 67A (Tc) 370W (Tc) Surface Mount D3Pak |
| Drain na zdroj napětí (Vdss): | 200V |
| Popis: | MOSFET N-CH 200V 67A D3PAK |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 67A (Tc) |
| Email: | [email protected] |
Související díly pro APT20M38SVRG/TR
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
APT20M38SVRG | Microsemi Corporation | MOSFET N-CH 200V 67A D3PAK | Dotaz |
 |
APT20M38BVFRG | Microsemi Corporation | MOSFET N-CH 200V 67A TO-247 | Dotaz |
 |
APT20M11JVR | Microsemi Corporation | MOSFET N-CH 200V 175A SOT-227 | Dotaz |
|
APT20M38SVFRG | Microsemi Corporation | MOSFET N-CH 200V 67A D3PAK | Dotaz |
|
APT20M38BVRG | Microsemi Corporation | MOSFET N-CH 200V 67A TO-247 | Dotaz |
 |
APT20SCD120B | Microsemi Corporation | DIODE SCHOTTKY 1.2KV 68A | Dotaz |
|
APT200GN60B2G | Microsemi Corporation | IGBT 600V 283A 682W TO247 | Dotaz |
|
APT20F50B | Microsemi Corporation | MOSFET N-CH 500V 20A TO-247 | Dotaz |
|
APT20M22JVRU3 | Microsemi Corporation | MOSFET N-CH 200V 97A SOT-227 | Dotaz |
 |
APT20M22B2VFRG | Microsemi Corporation | MOSFET N-CH 200V 100A T-MAX | Dotaz |
 |
APT200GN60JG | Microsemi Corporation | IGBT 600V 283A 682W SOT227 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers