Koupit ZXMN6A08GTA s BYCHPS
Koupit se zárukou
ZXMN6A08GTA
- Part Number:
- ZXMN6A08GTA
- Výrobce:
- Diodes Incorporated
- Popis:
- MOSFET N-CH 60V 3.8A SOT223
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 18286 Pieces
- Datový list:
- ZXMN6A08GTA.pdf
Úvod
BYCHIPS je distribuční odrůda pro ZXMN6A08GTA, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu ZXMN6A08GTA e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 1V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | SOT-223 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 80 mOhm @ 4.8A, 10V |
| Ztráta energie (Max): | 2W (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-261-4, TO-261AA |
| Ostatní jména: | ZXMN6A08GTR |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 10 Weeks |
| Výrobní číslo výrobce: | ZXMN6A08GTA |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 459pF @ 40V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 5.8nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 60V 3.8A (Ta) 2W (Ta) Surface Mount SOT-223 |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 4.5V, 10V |
| Drain na zdroj napětí (Vdss): | 60V |
| Popis: | MOSFET N-CH 60V 3.8A SOT223 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 3.8A (Ta) |
| Email: | [email protected] |
Související díly pro ZXMN6A08GTA
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
ZXMN6A08E6QTA | Diodes Incorporated | MOSFET N-CH 60V 2.8A SOT23-6 | Dotaz |
 |
ZXMN6A09DN8TA | Diodes Incorporated | MOSFET 2N-CH 60V 4.3A 8-SOIC | Dotaz |
|
ZXMN6A08E6TA | Diodes Incorporated | MOSFET N-CH 60V 2.8A SOT23-6 | Dotaz |
|
ZXMN6A25DN8TA | Diodes Incorporated | MOSFET 2N-CH 60V 3.8A 8-SOIC | Dotaz |
|
ZXMN6A08E6TC | Diodes Incorporated | MOSFET N-CH 60V 2.8A SOT23-6 | Dotaz |
 |
ZXMN6A09KTC | Diodes Incorporated | MOSFET N-CH 60V 11.2A DPAK | Dotaz |
|
ZXMN6A08KTC | Diodes Incorporated | MOSFET N-CH 60V 5.36A DPAK | Dotaz |
|
ZXMN6A09DN8TC | Diodes Incorporated | MOSFET 2N-CH 60V 4.3A 8SOIC | Dotaz |
 |
ZXMN6A25GTA | Diodes Incorporated | MOSFET N-CH 60V SOT223 | Dotaz |
|
ZXMN6A25N8TA | Diodes Incorporated | MOSFET N-CH 60V 8SO | Dotaz |
 |
ZXMN6A07FTA | Diodes Incorporated | MOSFET N-CH 60V 1.2A SOT23-3 | Dotaz |
|
ZXMN6A09GTA | Diodes Incorporated | MOSFET N-CH 60V 6.9A SOT223 | Dotaz |
 |
ZXMN6A07ZTA | Diodes Incorporated | MOSFET N-CH 60V 1.9A SOT-89 | Dotaz |
|
ZXMN6A07FTC | Diodes Incorporated | MOSFET N-CH 60V 1.2A SOT23-3 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers