Koupit SUP50N03-5M1P-GE3 s BYCHPS
Koupit se zárukou
SUP50N03-5M1P-GE3
- Part Number:
- SUP50N03-5M1P-GE3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET N-CH 30V 50A TO-220AB
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 18263 Pieces
- Datový list:
- 1.SUP50N03-5M1P-GE3.pdf2.SUP50N03-5M1P-GE3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SUP50N03-5M1P-GE3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SUP50N03-5M1P-GE3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2.5V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-220AB |
| Série: | TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 5.1 mOhm @ 22A, 10V |
| Ztráta energie (Max): | 2.7W (Ta), 59.5W (Tc) |
| Obal: | Bulk |
| Paket / krabice: | TO-220-3 |
| Ostatní jména: | SUP50N03-5M1P-GE3CT SUP50N03-5M1P-GE3CT-ND SUP50N035M1PGE3 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | SUP50N03-5M1P-GE3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 2780pF @ 15V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 66nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 30V 50A (Tc) 2.7W (Ta), 59.5W (Tc) Through Hole TO-220AB |
| Drain na zdroj napětí (Vdss): | 30V |
| Popis: | MOSFET N-CH 30V 50A TO-220AB |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 50A (Tc) |
| Email: | [email protected] |
Související díly pro SUP50N03-5M1P-GE3
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