Koupit SSM6N7002BFE,LM s BYCHPS
Koupit se zárukou
SSM6N7002BFE,LM
- Part Number:
- SSM6N7002BFE,LM
- Výrobce:
- Toshiba Semiconductor
- Popis:
- MOSFET 2N-CH 60V 0.2A ES6
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 19452 Pieces
- Datový list:
- 1.SSM6N7002BFE,LM.pdf2.SSM6N7002BFE,LM.pdf
Úvod
BYCHIPS je distribuční odrůda pro SSM6N7002BFE,LM, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SSM6N7002BFE,LM e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3.1V @ 250µA |
|---|---|
| Dodavatel zařízení Package: | ES6 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 2.1 Ohm @ 500mA, 10V |
| Power - Max: | 150mW |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | SOT-563, SOT-666 |
| Ostatní jména: | SSM6N7002BFE,LM(B SSM6N7002BFE,LM(T SSM6N7002BFELMTR |
| Provozní teplota: | 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 16 Weeks |
| Výrobní číslo výrobce: | SSM6N7002BFE,LM |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 17pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | - |
| Typ FET: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Rozšířený popis: | Mosfet Array 2 N-Channel (Dual) 60V 200mA 150mW Surface Mount ES6 |
| Drain na zdroj napětí (Vdss): | 60V |
| Popis: | MOSFET 2N-CH 60V 0.2A ES6 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 200mA |
| Email: | [email protected] |
Související díly pro SSM6N7002BFE,LM
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
SSM6N7002BFU(T5L,F | Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.2A US6 | Dotaz |
 |
SSM6N7002CFU,LF | Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.17A US6 | Dotaz |
|
SSM6N7002KFU,LF | Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.3A | Dotaz |
 |
SSM6N7002BFE(T5L,F | Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.2A ES6 | Dotaz |
|
SSM6N7002BFU,LF | Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.2A US6 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog