Koupit SQJ570EP-T1_GE3 s BYCHPS
Koupit se zárukou
SQJ570EP-T1_GE3
- Part Number:
- SQJ570EP-T1_GE3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET ARRAY N/P-CH 100V SO8
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 12174 Pieces
- Datový list:
- SQJ570EP-T1_GE3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SQJ570EP-T1_GE3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SQJ570EP-T1_GE3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2.5V @ 250µA |
|---|---|
| Dodavatel zařízení Package: | PowerPAK® SO-8 Dual |
| Série: | Automotive, AEC-Q101, TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V |
| Power - Max: | 27W |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | PowerPAK® SO-8 Dual |
| Ostatní jména: | SQJ570EP-T1_GE3TR |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 13 Weeks |
| Výrobní číslo výrobce: | SQJ570EP-T1_GE3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 650pF @ 25V, 600pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 20nC @ 10V, 15nC @ 10V |
| Typ FET: | N and P-Channel |
| FET Feature: | Standard |
| Rozšířený popis: | Mosfet Array N and P-Channel 100V 15A (Tc), 9.5A (Tc) 27W Surface Mount PowerPAK® SO-8 Dual |
| Drain na zdroj napětí (Vdss): | 100V |
| Popis: | MOSFET ARRAY N/P-CH 100V SO8 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 15A (Tc), 9.5A (Tc) |
| Email: | [email protected] |
Související díly pro SQJ570EP-T1_GE3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
DMN2029USD-13 | Diodes Incorporated | MOSFET 2N-CH 20V 5.8A 8SO | Dotaz |
 |
SI5902BDC-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 4A 1206-8 | Dotaz |
 |
TPS1120D | Texas Instruments | MOSFET 2P-CH 15V 1.17A 8-SOIC | Dotaz |
 |
ECH8672-TL-H | ON Semiconductor | MOSFET 2P-CH 20V 3.5A ECH8 | Dotaz |
 |
BUK9K5R1-30EX | Nexperia USA Inc. | MOSFET 2N-CH 30V 40A 56LFPAK | Dotaz |
 |
NTLJD4116NT1G | ON Semiconductor | MOSFET 2N-CH 30V 2.5A 6-WDFN | Dotaz |
 |
SI7270DP-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 8A PPAK SO-8 | Dotaz |
 |
ALD111933SAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | Dotaz |
 |
SI4944DY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 9.3A 8-SOIC | Dotaz |
|
ALD114804SCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16SOIC | Dotaz |
 |
SI5517DU-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 6A CHIPFET | Dotaz |
|
SI4923DY-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 30V 6.2A 8-SOIC | Dotaz |
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