Koupit SQJ200EP-T1_GE3 s BYCHPS
Koupit se zárukou
SQJ200EP-T1_GE3
- Part Number:
- SQJ200EP-T1_GE3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET 2N-CH 20V 20A/60A PPAK SO
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 17297 Pieces
- Datový list:
- SQJ200EP-T1_GE3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SQJ200EP-T1_GE3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SQJ200EP-T1_GE3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2V @ 250µA |
|---|---|
| Dodavatel zařízení Package: | PowerPAK® SO-8 Dual Asymmetric |
| Série: | Automotive, AEC-Q101, TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 8.8 mOhm @ 16A, 10V |
| Power - Max: | 27W, 48W |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | PowerPAK® SO-8 Dual |
| Ostatní jména: | SQJ200EP-T1_GE3TR |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 18 Weeks |
| Výrobní číslo výrobce: | SQJ200EP-T1_GE3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 975pF @ 10V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 18nC @ 10V |
| Typ FET: | 2 N-Channel (Dual) |
| FET Feature: | Standard |
| Rozšířený popis: | Mosfet Array 2 N-Channel (Dual) 20V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric |
| Drain na zdroj napětí (Vdss): | 20V |
| Popis: | MOSFET 2N-CH 20V 20A/60A PPAK SO |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 20A, 60A |
| Email: | [email protected] |
Související díly pro SQJ200EP-T1_GE3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
DMN3190LDW-7 | Diodes Incorporated | MOSFET 2N-CH 30V 1A SOT363 | Dotaz |
 |
FMP36-015P | IXYS | MOSFET N/P-CH 150V 36A/22A I4PAC | Dotaz |
 |
EFC6602R-A-TR | ON Semiconductor | MOSFET 2N-CH EFCP | Dotaz |
 |
FDR8508P | Fairchild/ON Semiconductor | MOSFET 2P-CH 30V 3A SSOT-8 | Dotaz |
 |
SI5511DC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 4A 1206-8 | Dotaz |
 |
IRF5851TR | Infineon Technologies | MOSFET N/P-CH 20V 6-TSOP | Dotaz |
 |
SQJ202EP-T1_GE3 | Vishay Siliconix | MOSFET 2N-CH 12V 20A/60A PPAK SO | Dotaz |
 |
CSD87355Q5D | Texas Instruments | MOSFET 2N-CH 30V 8LSON | Dotaz |
 |
US6J2TR | Rohm Semiconductor | MOSFET 2P-CH 20V 1A TUMT6 | Dotaz |
 |
PMDPB28UN,115 | NXP USA Inc. | MOSFET 2N-CH 20V 4.6A HUSON6 | Dotaz |
 |
APTM120H140FT1G | Microsemi Corporation | MOSFET 4N-CH 1200V 8A SP1 | Dotaz |
 |
APTC90AM60SCTG | Microsemi Corporation | MOSFET 2N-CH 900V 59A SP4 | Dotaz |
 |
AO4884L_001 | Alpha & Omega Semiconductor Inc. | MOSFET 2N-CH 40V 10A 8SOIC | Dotaz |
|
DI9952T | Diodes Incorporated | MOSFET N/P-CH 30V 2.9A 8-SOIC | Dotaz |
|
TPS1120DR | Texas Instruments | MOSFET 2P-CH 15V 1.17A 8-SOIC | Dotaz |
|
SI5905BDC-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 8V 4A 1206-8 | Dotaz |
 |
DMN5L06DMK-7 | Diodes Incorporated | MOSFET 2N-CH 50V 0.305A SOT-26 | Dotaz |
 |
VQ1006P | Vishay Siliconix | MOSFET 4N-CH 90V 0.4A 14DIP | Dotaz |
 |
AON6918 | Alpha & Omega Semiconductor Inc. | MOSFET 2N-CH 25V 15A/26.5A 8DFN | Dotaz |
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