Koupit SIHP30N60E-GE3 s BYCHPS
Koupit se zárukou
SIHP30N60E-GE3
- Part Number:
- SIHP30N60E-GE3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET N-CH 600V 29A TO220AB
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 13824 Pieces
- Datový list:
- SIHP30N60E-GE3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SIHP30N60E-GE3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SIHP30N60E-GE3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Technika: | MOSFET (Metal Oxide) |
| Série: | E |
| RDS On (Max) @ Id, Vgs: | 125 mOhm @ 15A, 10V |
| Ztráta energie (Max): | 250W (Tc) |
| Obal: | Original-Reel® |
| Paket / krabice: | TO-220-3 |
| Ostatní jména: | SIHP30N60E-GE3DKR |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 21 Weeks |
| Výrobní číslo výrobce: | SIHP30N60E-GE3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 2600pF @ 100V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 130nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 600V 29A (Tc) 250W (Tc) Through Hole |
| Drain na zdroj napětí (Vdss): | 600V |
| Popis: | MOSFET N-CH 600V 29A TO220AB |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 29A (Tc) |
| Email: | [email protected] |
Související díly pro SIHP30N60E-GE3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
SPI47N10L | Infineon Technologies | MOSFET N-CH 100V 47A I2PAK | Dotaz |
 |
SIHP38N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 43A TO220AB | Dotaz |
 |
IXTQ44N50P | IXYS | MOSFET N-CH 500V 44A TO-3P | Dotaz |
 |
STD7N60M2 | STMicroelectronics | MOSFET N-CH 600V DPAK | Dotaz |
|
SIHP30N60E-E3 | Vishay Siliconix | MOSFET N-CH 600V 29A TO220AB | Dotaz |
 |
IRF7425 | Infineon Technologies | MOSFET P-CH 20V 15A 8-SOIC | Dotaz |
|
IRFSL4620PBF | Infineon Technologies | MOSFET N-CH 200V 24A TO262 | Dotaz |
|
SIHP33N60EF-GE3 | Vishay Siliconix | MOSFET N-CH 600V 33A TO-220-3 | Dotaz |
 |
SUD50P10-43L-GE3 | Vishay Siliconix | MOSFET P-CH 100V 37.1A TO252 | Dotaz |
|
SIHP33N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 33A TO-220AB | Dotaz |
 |
STLD125N4F6AG | STMicroelectronics | MOSFET N-CH 40V 120A PWRFLAT 5X6 | Dotaz |
 |
SIR166DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 40A PPAK SO-8 | Dotaz |
 |
IXFT140N10P | IXYS | MOSFET N-CH 100V 140A TO-268 | Dotaz |
 |
DMT6016LFDF-7 | Diodes Incorporated | MOSFET N-CH 60V 8.9A 6UDFN | Dotaz |
 |
FQPF47P06 | Fairchild/ON Semiconductor | MOSFET P-CH 60V 30A TO-220F | Dotaz |
|
SIHP35N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 32A TO220AB | Dotaz |
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