Koupit SIA778DJ-T1-GE3 s BYCHPS
Koupit se zárukou
SIA778DJ-T1-GE3
- Part Number:
- SIA778DJ-T1-GE3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET 2N-CH 12V/20V SC70-6
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 19663 Pieces
- Datový list:
- SIA778DJ-T1-GE3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SIA778DJ-T1-GE3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SIA778DJ-T1-GE3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 1V @ 250µA |
|---|---|
| Dodavatel zařízení Package: | PowerPAK® SC-70-6 Dual |
| Série: | TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 29 mOhm @ 5A, 4.5V |
| Power - Max: | 6.5W, 5W |
| Obal: | Original-Reel® |
| Paket / krabice: | PowerPAK® SC-70-6 Dual |
| Ostatní jména: | SIA778DJ-T1-GE3DKR |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 18 Weeks |
| Výrobní číslo výrobce: | SIA778DJ-T1-GE3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 500pF @ 6V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 15nC @ 8V |
| Typ FET: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Rozšířený popis: | Mosfet Array 2 N-Channel (Dual) 12V, 20V 4.5A, 1.5A 6.5W, 5W Surface Mount PowerPAK® SC-70-6 Dual |
| Drain na zdroj napětí (Vdss): | 12V, 20V |
| Popis: | MOSFET 2N-CH 12V/20V SC70-6 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 4.5A, 1.5A |
| Email: | [email protected] |
Související díly pro SIA778DJ-T1-GE3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
AON7804 | Alpha & Omega Semiconductor Inc. | MOSFET 2N-CH 30V 9A 8DFN | Dotaz |
 |
SH8M24TB1 | Rohm Semiconductor | MOSFET N/P-CH 45V 4.5A/3.5A SOP8 | Dotaz |
 |
IRF7342TRPBF | Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8-SOIC | Dotaz |
 |
PMDT290UCE,115 | Nexperia USA Inc. | MOSFET N/P-CH 20V SOT666 | Dotaz |
 |
APTC60DDAM70T1G | Microsemi Corporation | MOSFET 2N-CH 600V 39A SP1 | Dotaz |
 |
SI1563EDH-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 1.13A SC70-6 | Dotaz |
 |
IPG20N06S4L11AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Dotaz |
 |
SI7501DN-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 30V 5.4A 1212-8 | Dotaz |
 |
IPG20N04S408ATMA1 | Infineon Technologies | MOSFET 2N-CH 40V 20A TDSON-8 | Dotaz |
 |
BSC150N03LD G | Infineon Technologies | MOSFET 2N-CH 30V 8A 8TDSON | Dotaz |
 |
DMN3032LFDB-13 | Diodes Incorporated | MOSFET 2N-CH 30V 6.2A UDFN2020-6 | Dotaz |
 |
SIA777EDJ-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V/12V SC70-6L | Dotaz |
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