Koupit SI7922DN-T1-E3 s BYCHPS
Koupit se zárukou
SI7922DN-T1-E3
- Part Number:
- SI7922DN-T1-E3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET 2N-CH 100V 1.8A 1212-8
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 13320 Pieces
- Datový list:
- SI7922DN-T1-E3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SI7922DN-T1-E3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SI7922DN-T1-E3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3.5V @ 250µA |
|---|---|
| Dodavatel zařízení Package: | PowerPAK® 1212-8 Dual |
| Série: | TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 195 mOhm @ 2.5A, 10V |
| Power - Max: | 1.3W |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | PowerPAK® 1212-8 Dual |
| Ostatní jména: | SI7922DN-T1-E3TR SI7922DNT1E3 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 24 Weeks |
| Výrobní číslo výrobce: | SI7922DN-T1-E3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | - |
| Nabíjení brány (Qg) (Max) @ Vgs: | 8nC @ 10V |
| Typ FET: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Rozšířený popis: | Mosfet Array 2 N-Channel (Dual) 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual |
| Drain na zdroj napětí (Vdss): | 100V |
| Popis: | MOSFET 2N-CH 100V 1.8A 1212-8 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 1.8A |
| Email: | [email protected] |
Související díly pro SI7922DN-T1-E3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
PMGD290XN,115 | Nexperia USA Inc. | MOSFET 2N-CH 20V 0.86A 6TSSOP | Dotaz |
 |
SI7922DN-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 100V 1.8A 1212-8 | Dotaz |
 |
SI3529DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 2.5A 6-TSOP | Dotaz |
|
SI7925DN-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 12V 4.8A 1212-8 | Dotaz |
 |
IXTL2X200N085T | IXYS | MOSFET 2N-CH 85V 112A I5-PAK | Dotaz |
 |
SI4900DY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 60V 5.3A 8-SOIC | Dotaz |
 |
FDS8958B | Fairchild/ON Semiconductor | MOSFET N/P-CH 30V 8SOIC | Dotaz |
 |
IRF7389PBF | Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | Dotaz |
|
SI7925DN-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 12V 4.8A 1212-8 | Dotaz |
|
NDS9945 | Fairchild/ON Semiconductor | MOSFET 2N-CH 60V 3.5A 8-SOIC | Dotaz |
 |
UP04979G0L | Panasonic Electronic Components | MOSFET N/P-CH 50V/30V SSMINI-6 | Dotaz |
|
SI7923DN-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 30V 4.3A 1212-8 | Dotaz |
|
SI7923DN-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 30V 4.3A 1212-8 | Dotaz |
 |
IRF5852TR | Infineon Technologies | MOSFET 2N-CH 20V 2.7A 6-TSOP | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers