Koupit SI7405BDN-T1-E3 s BYCHPS
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SI7405BDN-T1-E3
- Part Number:
- SI7405BDN-T1-E3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET P-CH 12V 16A PPAK 1212-8
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16745 Pieces
- Datový list:
- SI7405BDN-T1-E3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SI7405BDN-T1-E3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SI7405BDN-T1-E3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 1V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PowerPAK® 1212-8 |
| Série: | TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 13 mOhm @ 13.5A, 4.5V |
| Ztráta energie (Max): | 3.6W (Ta), 33W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | PowerPAK® 1212-8 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 24 Weeks |
| Výrobní číslo výrobce: | SI7405BDN-T1-E3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 3500pF @ 6V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 115nC @ 8V |
| Typ FET: | P-Channel |
| FET Feature: | - |
| Rozšířený popis: | P-Channel 12V 16A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8 |
| Drain na zdroj napětí (Vdss): | 12V |
| Popis: | MOSFET P-CH 12V 16A PPAK 1212-8 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 16A (Tc) |
| Email: | [email protected] |
Související díly pro SI7405BDN-T1-E3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
SI7403BDN-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 8A 1212-8 | Dotaz |
 |
IRLS630A | Fairchild/ON Semiconductor | MOSFET N-CH 200V 6.5A TO-220F | Dotaz |
|
SI7409ADN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 7A PPAK 1212-8 | Dotaz |
 |
SIHB15N50E-GE3 | Vishay Siliconix | MOSFET N-CH 500V 14.5A TO-263 | Dotaz |
|
SI7405BDN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V 16A 1212-8 | Dotaz |
 |
IPD50R950CE | Infineon Technologies | MOSFET N-CH 500V 4.3A PG-TO252 | Dotaz |
|
SI7402DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 13A PPAK 1212-8 | Dotaz |
|
SI7403BDN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 8A 1212-8 PPAK | Dotaz |
|
SI7407DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V 9.9A PPAK 1212-8 | Dotaz |
 |
RSD150N06TL | Rohm Semiconductor | MOSFET N-CH 60V 15A CPT3 | Dotaz |
|
SI7404DN-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 8.5A PPAK 1212-8 | Dotaz |
|
SI7409ADN-T1-E3 | Vishay Siliconix | MOSFET P-CH 30V 7A 1212-8 | Dotaz |
|
SI7407DN-T1-E3 | Vishay Siliconix | MOSFET P-CH 12V 9.9A PPAK 1212-8 | Dotaz |
 |
IXFX21N100F | IXYS | MOSFET N-CH 1KV 21A PLUS247-3 | Dotaz |
 |
ZXMN3A01FTC | Diodes Incorporated | MOSFET N-CH 30V 1.8A SOT23-3 | Dotaz |
 |
PMV117EN,215 | NXP USA Inc. | MOSFET N-CH 30V 2.5A SOT23 | Dotaz |
|
SI7402DN-T1-E3 | Vishay Siliconix | MOSFET N-CH 12V 13A PPAK 1212-8 | Dotaz |
|
SI7404DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 8.5A PPAK 1212-8 | Dotaz |
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