Koupit SI4511DY-T1-E3 s BYCHPS
Koupit se zárukou
SI4511DY-T1-E3
- Part Number:
- SI4511DY-T1-E3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET N/P-CH 20V 7.2A 8-SOIC
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 19664 Pieces
- Datový list:
- SI4511DY-T1-E3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SI4511DY-T1-E3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SI4511DY-T1-E3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 1.8V @ 250µA |
|---|---|
| Dodavatel zařízení Package: | 8-SO |
| Série: | TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 14.5 mOhm @ 9.6A, 10V |
| Power - Max: | 1.1W |
| Obal: | Original-Reel® |
| Paket / krabice: | 8-SOIC (0.154", 3.90mm Width) |
| Ostatní jména: | SI4511DY-T1-E3DKR |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | SI4511DY-T1-E3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | - |
| Nabíjení brány (Qg) (Max) @ Vgs: | 18nC @ 4.5V |
| Typ FET: | N and P-Channel |
| FET Feature: | Logic Level Gate |
| Rozšířený popis: | Mosfet Array N and P-Channel 20V 7.2A, 4.6A 1.1W Surface Mount 8-SO |
| Drain na zdroj napětí (Vdss): | 20V |
| Popis: | MOSFET N/P-CH 20V 7.2A 8-SOIC |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 7.2A, 4.6A |
| Email: | [email protected] |
Související díly pro SI4511DY-T1-E3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
NTMD2P01R2G | ON Semiconductor | MOSFET 2P-CH 16V 2.3A 8SOIC | Dotaz |
 |
SI4511DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 7.2A 8-SOIC | Dotaz |
 |
VEC2616-TL-W | ON Semiconductor | MOSFET N/P-CH 60V 3A/2.5A VEC8 | Dotaz |
 |
SI5980DU-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 100V 2.5A CHIPFET | Dotaz |
 |
UPA2672T1R-E2-AX | Renesas Electronics America | MOSFET 2P-CH 12V 4A 6HUSON | Dotaz |
 |
NDS9948 | Fairchild/ON Semiconductor | MOSFET 2P-CH 60V 2.3A 8-SOIC | Dotaz |
 |
FDC6302P | Fairchild/ON Semiconductor | MOSFET 2P-CH 25V 0.12A SSOT6 | Dotaz |
|
DMS3017SSD-13 | Diodes Incorporated | MOSFET 2N-CH 30V 8A/6A 8SO | Dotaz |
 |
FMM75-01F | IXYS | MOSFET 2N-CH 100V 75A I4-PAC-5 | Dotaz |
 |
PHKD13N03LT,118 | Nexperia USA Inc. | MOSFET 2N-CH 30V 10.4A 8SOIC | Dotaz |
|
SI4923DY-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 30V 6.2A 8-SOIC | Dotaz |
 |
NTUD3170NZT5G | ON Semiconductor | MOSFET 2N-CH 20V 0.22A SOT-963 | Dotaz |
 |
SI1024X-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 20V 0.485A SC89-6 | Dotaz |
 |
EPC2103ENGRT | EPC | TRANS GAN SYM HALF BRDG 80V | Dotaz |
|
SI4830ADY-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.7A 8-SOIC | Dotaz |
|
NTMD4N03R2G | ON Semiconductor | MOSFET 2N-CH 30V 4A 8SOIC | Dotaz |
 |
MP6M11TCR | Rohm Semiconductor | MOSFET N/P-CH 30V 3.5A MPT6 | Dotaz |
 |
CSD87312Q3E | Texas Instruments | MOSFET 2N-CH 30V 27A 8VSON | Dotaz |
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