Koupit SI1012CR-T1-GE3 s BYCHPS
Koupit se zárukou
SI1012CR-T1-GE3
- Part Number:
- SI1012CR-T1-GE3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET N-CH 20V 0.63A SC-75A
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 14271 Pieces
- Datový list:
- SI1012CR-T1-GE3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SI1012CR-T1-GE3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SI1012CR-T1-GE3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 1V @ 250µA |
|---|---|
| Vgs (Max): | ±8V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | SC-75A |
| Série: | TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 396 mOhm @ 600mA, 4.5V |
| Ztráta energie (Max): | 240mW (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | SC-75, SOT-416 |
| Ostatní jména: | SI1012CR-T1-GE3-ND SI1012CR-T1-GE3TR |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 24 Weeks |
| Výrobní číslo výrobce: | SI1012CR-T1-GE3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 43pF @ 10V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 2nC @ 8V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 20V 240mW (Ta) Surface Mount SC-75A |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 1.5V, 4.5V |
| Drain na zdroj napětí (Vdss): | 20V |
| Popis: | MOSFET N-CH 20V 0.63A SC-75A |
| Proud - kontinuální odtok (Id) @ 25 ° C: | - |
| Email: | [email protected] |
Související díly pro SI1012CR-T1-GE3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
SI1013CX-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 0.45A SC89-3 | Dotaz |
 |
SI1016X-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V SC89-6 | Dotaz |
|
SI1012X-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 500MA SC89-3 | Dotaz |
 |
SI1012R-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 500MA SC-75A | Dotaz |
 |
APT1204R7BFLLG | Microsemi Corporation | MOSFET N-CH 1200V 3.5A TO-247 | Dotaz |
|
SI1011X-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V SC-89 | Dotaz |
|
SI1013R-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 350MA SC-75A | Dotaz |
 |
SI1012X-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 500MA SC89-3 | Dotaz |
|
SI1013R-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 350MA SC-75A | Dotaz |
|
SI1012R-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 500MA SC-75A | Dotaz |
 |
CSD18511Q5AT | Texas Instruments | 40V N-CHANNEL NEXFET POWER MOSF | Dotaz |
|
SI1013X-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 350MA SC89-3 | Dotaz |
|
SI1016CX-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V SC89-6 | Dotaz |
 |
IRL640STRL | Vishay Siliconix | MOSFET N-CH 200V 17A D2PAK | Dotaz |
|
SI1013X-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 350MA SC89-3 | Dotaz |
|
SI1016X-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 20V SOT563F | Dotaz |
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