Koupit PMDPB70EN,115 s BYCHPS
Koupit se zárukou
PMDPB70EN,115
- Part Number:
- PMDPB70EN,115
- Výrobce:
- NXP Semiconductors / Freescale
- Popis:
- MOSFET 2N-CH 30V 3.5A 6DFN
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 19237 Pieces
- Datový list:
- PMDPB70EN,115.pdf
Úvod
BYCHIPS je distribuční odrůda pro PMDPB70EN,115, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu PMDPB70EN,115 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2.5V @ 250µA |
|---|---|
| Dodavatel zařízení Package: | DFN2020-6 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 57 mOhm @ 3.5A, 10V |
| Power - Max: | 510mW |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | 6-UDFN Exposed Pad |
| Ostatní jména: | 568-10761-2 934066486115 PMDPB70EN,115-ND |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | PMDPB70EN,115 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 130pF @ 15V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 4.5nC @ 10V |
| Typ FET: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Rozšířený popis: | Mosfet Array 2 N-Channel (Dual) 30V 3.5A 510mW Surface Mount DFN2020-6 |
| Drain na zdroj napětí (Vdss): | 30V |
| Popis: | MOSFET 2N-CH 30V 3.5A 6DFN |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 3.5A |
| Email: | [email protected] |
Související díly pro PMDPB70EN,115
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IXTL2X240N055T | IXYS | MOSFET 2N-CH 55V 140A ISOPLUS I5 | Dotaz |
 |
IPG20N06S2L65AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Dotaz |
 |
PMDPB28UN,115 | NXP USA Inc. | MOSFET 2N-CH 20V 4.6A HUSON6 | Dotaz |
 |
QS8K13TCR | Rohm Semiconductor | MOSFET 2N-CH 30V 6A TSMT8 | Dotaz |
|
PMDPB56XN,115 | NXP USA Inc. | MOSFET 2N-CH 30V 3.1A HUSON6 | Dotaz |
 |
IRF7905TRPBF | Infineon Technologies | MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC | Dotaz |
 |
SH8K32TB1 | Rohm Semiconductor | MOSFET 2N-CH 60V 4.5A SOP8 | Dotaz |
|
PMDPB95XNE,115 | NXP USA Inc. | MOSFET 2N-CH 30V 2.4A HUSON6 | Dotaz |
 |
ALD212914PAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | Dotaz |
|
PMDPB38UNE,115 | NXP USA Inc. | MOSFET 2N-CH 20V 4A HUSON6 | Dotaz |
|
PMDPB42UN,115 | NXP USA Inc. | MOSFET 2N-CH 20V 3.9A HUSON6 | Dotaz |
 |
SI4818DY-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.3A 8-SOIC | Dotaz |
 |
SI1024X-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 20V 0.485A SOT563F | Dotaz |
 |
DMN2010UDZ-7 | Diodes Incorporated | MOSFET 2N-CH 20V 11A U-DFN2535-6 | Dotaz |
 |
DMTH4007SPDQ-13 | Diodes Incorporated | MOSFET 2N-CH 40V POWERDI506 | Dotaz |
|
BSO211PNTMA1 | Infineon Technologies | MOSFET 2P-CH 20V 4.7A 8SOIC | Dotaz |
|
PMDPB65UP,115 | NXP USA Inc. | MOSFET 2P-CH 20V 3.5A SOT1118 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers