Koupit NTGS3130NT1G s BYCHPS
Koupit se zárukou
NTGS3130NT1G
- Part Number:
- NTGS3130NT1G
- Popis:
- MOSFET N-CH 20V 4.2A 6-TSOP
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 18176 Pieces
- Datový list:
- NTGS3130NT1G.pdf
Úvod
BYCHIPS je distribuční odrůda pro NTGS3130NT1G, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu NTGS3130NT1G e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 1.4V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | 6-TSOP |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 24 mOhm @ 5.6A, 4.5V |
| Ztráta energie (Max): | 600mW (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | SOT-23-6 |
| Ostatní jména: | NTGS3130NT1G-ND NTGS3130NT1GOSTR |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 30 Weeks |
| Výrobní číslo výrobce: | NTGS3130NT1G |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 935pF @ 16V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 20.3nC @ 4.5V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 20V 4.2A (Ta) 600mW (Ta) Surface Mount 6-TSOP |
| Drain na zdroj napětí (Vdss): | 20V |
| Popis: | MOSFET N-CH 20V 4.2A 6-TSOP |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 4.2A (Ta) |
| Email: | [email protected] |
Související díly pro NTGS3130NT1G
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
NTGS3443T2G | ON Semiconductor | MOSFET P-CH 20V 2.2A 6-TSOP | Dotaz |
|
NTGS3443T1G | ON Semiconductor | MOSFET P-CH 20V 2.2A 6-TSOP | Dotaz |
|
NTGS3136PT1G | ON Semiconductor | MOSFET P-CH 20V 3.7A 6-TSOP | Dotaz |
 |
IPP041N12N3 G | Infineon Technologies | MOSFET N-CH 120V 120A TO220-3 | Dotaz |
|
NTGS3443BT1G | ON Semiconductor | MOSFET P-CH 20V 2.7A 6-TSOP | Dotaz |
|
NTGS3443T1 | ON Semiconductor | MOSFET P-CH 20V 2.2A 6-TSOP | Dotaz |
|
NTGS3441PT1G | ON Semiconductor | MOSFET P-CH 20V 1.8A 6-TSOP | Dotaz |
 |
FQD3N30TM | Fairchild/ON Semiconductor | MOSFET N-CH 300V 2.4A DPAK | Dotaz |
|
NTGS3446T1 | ON Semiconductor | MOSFET N-CH 20V 2.5A 6-TSOP | Dotaz |
|
NTGS3455T1G | ON Semiconductor | MOSFET P-CH 30V 2.5A 6-TSOP | Dotaz |
 |
AUIRFU3607 | Infineon Technologies | MOSFET N CH 75V 56A I-PAK | Dotaz |
|
NTGS3446T1G | ON Semiconductor | MOSFET N-CH 20V 2.5A 6TSOP | Dotaz |
|
NTGS3441BT1G | ON Semiconductor | MOSFET P-CH 20V 2.2A 6-TSOP | Dotaz |
|
NTGS3433T1G | ON Semiconductor | MOSFET P-CH 12V 2.35A 6-TSOP | Dotaz |
|
NTGS3441T1G | ON Semiconductor | MOSFET P-CH 20V 1.65A 6-TSOP | Dotaz |
|
NTGS3447PT1G | ON Semiconductor | MOSFET P-CH 12V 3.4A 6-TSOP | Dotaz |
|
NTGS3441T1 | ON Semiconductor | MOSFET P-CH 20V 1.65A 6-TSOP | Dotaz |
|
NTGS3455T1 | ON Semiconductor | MOSFET P-CH 30V 2.5A 6-TSOP | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers