Koupit NTD5802NT4G s BYCHPS
Koupit se zárukou
NTD5802NT4G
- Part Number:
- NTD5802NT4G
- Popis:
- MOSFET N-CH 40V 16.4A DPAK
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16234 Pieces
- Datový list:
- NTD5802NT4G.pdf
Úvod
BYCHIPS je distribuční odrůda pro NTD5802NT4G, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu NTD5802NT4G e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | DPAK |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 4.4 mOhm @ 50A, 10V |
| Ztráta energie (Max): | 2.5W (Ta), 93.75W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Ostatní jména: | NTD5802NT4G-ND NTD5802NT4GOSTR |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 11 Weeks |
| Výrobní číslo výrobce: | NTD5802NT4G |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 5025pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 100nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 5V, 10V |
| Drain na zdroj napětí (Vdss): | 40V |
| Popis: | MOSFET N-CH 40V 16.4A DPAK |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 16.4A (Ta), 101A (Tc) |
| Email: | [email protected] |
Související díly pro NTD5802NT4G
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|---|---|---|---|---|
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NTD5862NT4G | ON Semiconductor | MOSFET N-CH 60V 98A DPAK | Dotaz |
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IRFSL17N20DPBF | Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | Dotaz |
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NTD5803NT4G | ON Semiconductor | MOSFET N-CH 40V 76A DPAK | Dotaz |
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NTD5865NT4G | ON Semiconductor | MOSFET N-CH 60V 43A DPAK | Dotaz |
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