Koupit NP80N04KHE-E1-AY s BYCHPS
Koupit se zárukou
NP80N04KHE-E1-AY
- Part Number:
- NP80N04KHE-E1-AY
- Výrobce:
- Renesas Electronics America
- Popis:
- MOSFET N-CH 40V 80A TO-263
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 14644 Pieces
- Datový list:
- NP80N04KHE-E1-AY.pdf
Úvod
BYCHIPS je distribuční odrůda pro NP80N04KHE-E1-AY, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu NP80N04KHE-E1-AY e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-263 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 8 mOhm @ 40A, 10V |
| Ztráta energie (Max): | 1.8W (Ta), 120W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Provozní teplota: | 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 16 Weeks |
| Výrobní číslo výrobce: | NP80N04KHE-E1-AY |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 3300pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 60nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 40V 80A (Tc) 1.8W (Ta), 120W (Tc) Surface Mount TO-263 |
| Drain na zdroj napětí (Vdss): | 40V |
| Popis: | MOSFET N-CH 40V 80A TO-263 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 80A (Tc) |
| Email: | [email protected] |
Související díly pro NP80N04KHE-E1-AY
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
STP50NE10 | STMicroelectronics | MOSFET N-CH 100V 50A TO-220 | Dotaz |
 |
FQP3N90 | Fairchild/ON Semiconductor | MOSFET N-CH 900V 3.6A TO-220 | Dotaz |
 |
NP80N06MLG-S18-AY | Renesas Electronics America | MOSFET N-CH 60V 80A TO-220 | Dotaz |
 |
NVMFS5C442NT3G | ON Semiconductor | MOSFET N-CH 40V SO8FL | Dotaz |
 |
NP80N06PLG-E1B-AY | Renesas Electronics America | MOSFET N-CH 60V 80A TO-263 | Dotaz |
|
NP80N04PUG-E1B-AY | Renesas Electronics America | MOSFET N-CH 40V 80A TO-263 | Dotaz |
 |
NP80N055NDG-S18-AY | Renesas Electronics America | MOSFET N-CH 55V 80A TO-262 | Dotaz |
|
NP80N04PLG-E1B-AY | Renesas Electronics America | MOSFET N-CH 40V 80A TO-263 | Dotaz |
|
NP80N055MHE-S18-AY | Renesas Electronics America | MOSFET N-CH 55V 80A TO-220 | Dotaz |
|
NP80N055KLE-E1-AY | Renesas Electronics America | MOSFET N-CH 55V 80A TO-263 | Dotaz |
 |
SQS462EN-T1_GE3 | Vishay Siliconix | MOSFET N-CH 60V 8A 1212-8 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers