Koupit MMBF0201NLT1 s BYCHPS
Koupit se zárukou
MMBF0201NLT1
- Part Number:
- MMBF0201NLT1
- Popis:
- MOSFET N-CH 20V 300MA SOT-23
- Stav volného vedení / RoHS:
- Obsahuje olověný / RoHS neodpovídající
- dostupné množství:
- 17212 Pieces
- Datový list:
- MMBF0201NLT1.pdf
Úvod
BYCHIPS je distribuční odrůda pro MMBF0201NLT1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu MMBF0201NLT1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2.4V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | SOT-23-3 (TO-236) |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 1 Ohm @ 300mA, 10V |
| Ztráta energie (Max): | 225mW (Ta) |
| Obal: | Cut Tape (CT) |
| Paket / krabice: | TO-236-3, SC-59, SOT-23-3 |
| Ostatní jména: | MMBF0201NLT1OSCT |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | MMBF0201NLT1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 45pF @ 5V |
| Nabíjení brány (Qg) (Max) @ Vgs: | - |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 20V 300mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236) |
| Drain na zdroj napětí (Vdss): | 20V |
| Popis: | MOSFET N-CH 20V 300MA SOT-23 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 300mA (Ta) |
| Email: | [email protected] |
Související díly pro MMBF0201NLT1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
TJ60S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage | MOSFET P-CH 60V 60A DPAK-3 | Dotaz |
 |
2SK4099LS-1E | ON Semiconductor | MOSFET N-CH 600V 8.5A | Dotaz |
 |
IXTH02N450HV | IXYS | MOSFET N-CH 4500V 0.2A TO247HV | Dotaz |
 |
IXFV30N60P | IXYS | MOSFET N-CH 600V 30A PLUS220 | Dotaz |
 |
IPI70N04S406AKSA1 | Infineon Technologies | MOSFET N-CH 40V 70A TO262-3-1 | Dotaz |
 |
STP4N62K3 | STMicroelectronics | MOSFET N-CH 620V 3.8A TO-220 | Dotaz |
 |
STF5N52K3 | STMicroelectronics | MOSFET N-CH 525V 4.4A TO-220FP | Dotaz |
 |
MMBF0201NLT1G | ON Semiconductor | MOSFET N-CH 20V 300MA SOT-23 | Dotaz |
 |
IRFR9010TRR | Vishay Siliconix | MOSFET P-CH 50V 5.3A DPAK | Dotaz |
|
SQD40P10-40L_GE3 | Vishay Siliconix | MOSFET P-CHAN 100V TO252 | Dotaz |
 |
FDB8444 | Fairchild/ON Semiconductor | MOSFET N-CH 40V 70A TO-263AB | Dotaz |
 |
SCT3060ALGC11 | Rohm Semiconductor | MOSFET NCH 650V 39A TO247N | Dotaz |
 |
IXTY02N120P | IXYS | MOSFET N-CH 1200V 0.2A DPAK | Dotaz |
 |
MTM232270LBF | Panasonic Electronic Components | MOSFET N CH 20V 2A SMINI3-G1-B | Dotaz |
 |
STW9N150 | STMicroelectronics | MOSFET N-CH 1500V 8A TO-247 | Dotaz |
 |
IXTA3N120 | IXYS | MOSFET N-CH 1.2KV 3A TO-263 | Dotaz |
 |
NTD4863N-35G | ON Semiconductor | MOSFET N-CH 25V 9.2A IPAK | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers