Koupit IXTU02N50D s BYCHPS
Koupit se zárukou
IXTU02N50D
- Part Number:
- IXTU02N50D
- Výrobce:
- IXYS Corporation
- Popis:
- MOSFET N-CH 500V 0.2A TO-251
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 12741 Pieces
- Datový list:
- IXTU02N50D.pdf
Úvod
BYCHIPS je distribuční odrůda pro IXTU02N50D, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IXTU02N50D e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 5V @ 25µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-251 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 30 Ohm @ 50mA, 0V |
| Ztráta energie (Max): | 1.1W (Ta), 25W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-251-3 Short Leads, IPak, TO-251AA |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 12 Weeks |
| Výrobní číslo výrobce: | IXTU02N50D |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 120pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | - |
| Typ FET: | N-Channel |
| FET Feature: | Depletion Mode |
| Rozšířený popis: | N-Channel 500V 200mA (Tc) 1.1W (Ta), 25W (Tc) Through Hole TO-251 |
| Drain na zdroj napětí (Vdss): | 500V |
| Popis: | MOSFET N-CH 500V 0.2A TO-251 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 200mA (Tc) |
| Email: | [email protected] |
Související díly pro IXTU02N50D
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
FQB34N20TM_AM002 | Fairchild/ON Semiconductor | MOSFET N-CH 200V 31A D2PAK | Dotaz |
 |
FDG315N | Fairchild/ON Semiconductor | MOSFET N-CH 30V 2A SC70-6 | Dotaz |
 |
IXTU01N100 | IXYS | MOSFET N-CH 1KV .1A I-PAK | Dotaz |
 |
FDA24N50 | Fairchild/ON Semiconductor | MOSFET N-CH 500V 24A TO-3PN | Dotaz |
|
IXTU06N120P | IXYS | MOSFET N-CH 1200V 0.6A TO-251 | Dotaz |
 |
STW7N90K5 | STMicroelectronics | N-CHANNEL 800 V, 0.75 OHM TYP., | Dotaz |
 |
NTTFS4C25NTWG | ON Semiconductor | MOSFET N-CH 30V 27A U8FL | Dotaz |
 |
IRFR4615PBF | Infineon Technologies | MOSFET N-CH 150V 33A D-PAK | Dotaz |
 |
IPL65R230C7AUMA1 | Infineon Technologies | MOSFET N-CH 650V 10A 4VSON | Dotaz |
|
IXTU01N80 | IXYS | MOSFET N-CH 800V 0.1A TO-251 | Dotaz |
|
IXTU08N100P | IXYS | MOSFET N-CH 1000V 8A TO-251 | Dotaz |
 |
AOI2606 | Alpha & Omega Semiconductor Inc. | MOSFET NCH 60V 46A TO251A | Dotaz |
 |
STN2NF10 | STMicroelectronics | MOSFET N-CH 100V 2.4A SOT-223 | Dotaz |
|
IXTU05N120 | IXYS | MOSFET N-CH 1200V 0.5A TO-251 | Dotaz |
 |
IXTA75N10P | IXYS | MOSFET N-CH 100V 75A TO-263 | Dotaz |
|
IRFR1205TRL | Infineon Technologies | MOSFET N-CH 55V 44A DPAK | Dotaz |
|
IXTU01N100D | IXYS | MOSFET N-CH 1000V 0.1A TO-251 | Dotaz |
|
IXTU05N100 | IXYS | MOSFET N-CH 1000V 750MA TO-251 | Dotaz |
 |
STB5N62K3 | STMicroelectronics | MOSFET N-CH 620V 4.2A D2PAK | Dotaz |
 |
NTMFS4931NT3G | ON Semiconductor | MOSFET N-CH 30V 236A SO8FL | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers