Koupit IXTN660N04T4 s BYCHPS
Koupit se zárukou
IXTN660N04T4
- Part Number:
- IXTN660N04T4
- Výrobce:
- IXYS Corporation
- Popis:
- 40V/660A TRENCHT4 PWR MOSFET SOT
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 18056 Pieces
- Datový list:
- 1.IXTN660N04T4.pdf2.IXTN660N04T4.pdf
Úvod
BYCHIPS je distribuční odrůda pro IXTN660N04T4, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IXTN660N04T4 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±15V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | SOT-227B |
| Série: | TrenchT4™ |
| RDS On (Max) @ Id, Vgs: | 0.85 mOhm @ 100A, 10V |
| Ztráta energie (Max): | 1040W (Tc) |
| Obal: | Bulk |
| Paket / krabice: | SOT-227-4, miniBLOC |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Chassis Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 8 Weeks |
| Výrobní číslo výrobce: | IXTN660N04T4 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 44000pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 860nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | Current Sensing |
| Rozšířený popis: | N-Channel 40V 660A (Tc) 1040W (Tc) Chassis Mount SOT-227B |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 10V |
| Drain na zdroj napětí (Vdss): | 40V |
| Popis: | 40V/660A TRENCHT4 PWR MOSFET SOT |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 660A (Tc) |
| Email: | [email protected] |
Související díly pro IXTN660N04T4
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPD122N10N3GATMA1 | Infineon Technologies | MOSFET N-CH 100V 59A | Dotaz |
 |
FDT86246L | Fairchild/ON Semiconductor | MOSFET N-CH 150V 2A SOT-223 | Dotaz |
 |
NX3008NBKMB,315 | Nexperia USA Inc. | MOSFET N-CH 30V 530MA 3DFN | Dotaz |
 |
IXTN60N50L2 | IXYS | MOSFET N-CH 500V 53A SOT-227 | Dotaz |
|
IXTN600N04T2 | IXYS | MOSFET N-CH 40V 600A SOT-227 | Dotaz |
 |
STL8N65M5 | STMicroelectronics | MOSFET N-CH 650V 7A POWERFLAT | Dotaz |
 |
VP2110K1-G | Microchip Technology | MOSFET P-CH 100V 0.12A SOT23-3 | Dotaz |
 |
SUD42N03-3M9P-GE3 | Vishay Siliconix | MOSFET N-CH 30V 42A TO252 | Dotaz |
 |
IRF3708PBF | Infineon Technologies | MOSFET N-CH 30V 62A TO-220AB | Dotaz |
|
IXTN62N50L | IXYS | MOSFET N-CH 500V 62A SOT-227 | Dotaz |
 |
BSC0500NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 35A TDSON-8 | Dotaz |
 |
IXTL2N450 | IXYS | MOSFET N-CH 4500V 2A I5PAK | Dotaz |
 |
EPC2023ENGR | EPC | TRANS GAN 30V 60A BUMPED DIE | Dotaz |
 |
BUK9Y19-75B,115 | Nexperia USA Inc. | MOSFET N-CH 75V 48.2A LFPAK | Dotaz |
 |
R6024KNZ1C9 | Rohm Semiconductor | NCH 600V 24A POWER MOSFET | Dotaz |
 |
IRF840ASTRL | Vishay Siliconix | MOSFET N-CH 500V 8A D2PAK | Dotaz |
 |
IRFR3704ZPBF | Infineon Technologies | MOSFET N-CH 20V 60A DPAK | Dotaz |
|
BSP171PL6327HTSA1 | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT-223 | Dotaz |
 |
IPP50R380CE | Infineon Technologies | MOSFET N CH 500V 9.9A PGTO220 | Dotaz |
 |
STR2N2VH5 | STMicroelectronics | MOSFET N-CH 20V 2.3A SOT-23 | Dotaz |
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