Koupit IXTN32P60P s BYCHPS
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IXTN32P60P
- Part Number:
- IXTN32P60P
- Výrobce:
- IXYS Corporation
- Popis:
- MOSFET P-CH 600V 32A SOT227
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 17778 Pieces
- Datový list:
- IXTN32P60P.pdf
Úvod
BYCHIPS je distribuční odrůda pro IXTN32P60P, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IXTN32P60P e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 1mA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | SOT-227B |
| Série: | PolarP™ |
| RDS On (Max) @ Id, Vgs: | 350 mOhm @ 500mA, 10V |
| Ztráta energie (Max): | 890W (Tc) |
| Obal: | Tube |
| Paket / krabice: | SOT-227-4, miniBLOC |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Chassis Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 8 Weeks |
| Výrobní číslo výrobce: | IXTN32P60P |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 11100pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 196nC @ 10V |
| Typ FET: | P-Channel |
| FET Feature: | - |
| Rozšířený popis: | P-Channel 600V 32A 890W (Tc) Chassis Mount SOT-227B |
| Drain na zdroj napětí (Vdss): | 600V |
| Popis: | MOSFET P-CH 600V 32A SOT227 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 32A |
| Email: | [email protected] |
Související díly pro IXTN32P60P
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
FDMA8878 | Fairchild/ON Semiconductor | MOSFET N-CH 30V 9A MICROFET | Dotaz |
 |
TP2540N3-G | Microchip Technology | MOSFET P-CH 400V 0.086A TO92-3 | Dotaz |
 |
IXTN36N50 | IXYS | MOSFET N-CH 500V 36A SOT-227 | Dotaz |
 |
SSM3K7002KFU,LF | Toshiba Semiconductor and Storage | LOAD SWITCH CURRENT REDUCTION | Dotaz |
 |
IRF1324PBF | Infineon Technologies | MOSFET N-CH 24V 195A TO220AB | Dotaz |
 |
IXTA08N100P | IXYS | MOSFET N-CH 1000V 0.8A TO-263 | Dotaz |
 |
IXFA220N06T3 | IXYS | 60V/220A TRENCHT3 HIPERFET MOSFE | Dotaz |
|
STB25NM50N | STMicroelectronics | MOSFET N-CH 500V 22A D2PAK | Dotaz |
 |
RQ1C065UNTR | Rohm Semiconductor | MOSFET N-CH 20V 6.5A TSMT8 | Dotaz |
|
IXTN320N10T | IXYS | MOSFET N-CH 100V 320A SOT-227B | Dotaz |
 |
GA10JT12-247 | GeneSiC Semiconductor | TRANS SJT 1.2KV 10A | Dotaz |
 |
BSL606SNH6327XTSA1 | Infineon Technologies | MOSFET N-CH 60V 4.5A 6TSOP | Dotaz |
 |
IRF9610PBF | Vishay Siliconix | MOSFET P-CH 200V 1.8A TO-220AB | Dotaz |
|
IRFB4332PBF | Infineon Technologies | MOSFET N-CH 250V 60A TO-220AB | Dotaz |
 |
FQPF1N60 | Fairchild/ON Semiconductor | MOSFET N-CH 600V 0.9A TO-220F | Dotaz |
|
IXTN30N100L | IXYS | MOSFET N-CH 1000V 30A SOT-227 | Dotaz |
 |
SI2325DS-T1-GE3 | Vishay Siliconix | MOSFET P-CH 150V 0.53A SOT-23 | Dotaz |
 |
IRFI620GPBF | Vishay Siliconix | MOSFET N-CH 200V 4.1A TO220FP | Dotaz |
 |
IXFR20N80P | IXYS | MOSFET N-CH 800V 11A ISOPLUS247 | Dotaz |
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