Koupit IXTN200N10L2 s BYCHPS
Koupit se zárukou
IXTN200N10L2
- Part Number:
- IXTN200N10L2
- Výrobce:
- IXYS Corporation
- Popis:
- MOSFET N-CH 100V 178A SOT-227
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 20069 Pieces
- Datový list:
- IXTN200N10L2.pdf
Úvod
BYCHIPS je distribuční odrůda pro IXTN200N10L2, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IXTN200N10L2 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4.5V @ 3mA |
|---|---|
| Vgs (Max): | ±20V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | SOT-227B |
| Série: | Linear L2™ |
| RDS On (Max) @ Id, Vgs: | 11 mOhm @ 100A, 10V |
| Ztráta energie (Max): | 830W (Tc) |
| Obal: | - |
| Paket / krabice: | SOT-227-4, miniBLOC |
| Ostatní jména: | 624413 Q5211084 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Chassis Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 8 Weeks |
| Výrobní číslo výrobce: | IXTN200N10L2 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 23000pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 540nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 100V 178A 830W (Tc) Chassis Mount SOT-227B |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 10V |
| Drain na zdroj napětí (Vdss): | 100V |
| Popis: | MOSFET N-CH 100V 178A SOT-227 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 178A |
| Email: | [email protected] |
Související díly pro IXTN200N10L2
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IXTN22N100L | IXYS | MOSFET N-CH 1000V 22A SOT-227 | Dotaz |
|
IXTN200N10T | IXYS | MOSFET N-CH 100V 200A SOT-227 | Dotaz |
|
IXTN210P10T | IXYS | MOSFET P-CH 100V 210A SOT-227 | Dotaz |
 |
IXFR10N100Q | IXYS | MOSFET N-CH 1000V 9A ISOPLUS247 | Dotaz |
 |
FDMS7680 | Fairchild/ON Semiconductor | MOSFET N-CH 30V 14A POWER56 | Dotaz |
 |
STI42N65M5 | STMicroelectronics | MOSFET N-CH 650V 33A I2PAK | Dotaz |
 |
TK40P04M1(T6RSS-Q) | Toshiba Semiconductor and Storage | MOSFET N-CH 40V 40A 3DP 2-7K1A | Dotaz |
 |
IRFZ46ZL | Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | Dotaz |
 |
MCH3383-TL-W | ON Semiconductor | MOSFET P-CH 12V 3.5A SC70FL | Dotaz |
 |
STP60NF03L | STMicroelectronics | MOSFET N-CH 30V 60A TO-220 | Dotaz |
 |
FDMS2672 | Fairchild/ON Semiconductor | MOSFET N-CH 200V 3.7A POWER56 | Dotaz |
 |
IPL65R650C6SATMA1 | Infineon Technologies | MOSFET N-CH 8TSON | Dotaz |
 |
PSMN027-100XS,127 | Nexperia USA Inc. | MOSFET N-CH 100V 23.4A TO220F | Dotaz |
 |
APTM50SKM19G | Microsemi Corporation | MOSFET N-CH 500V 163A SP6 | Dotaz |
|
IXTN21N100 | IXYS | MOSFET N-CH 1KV 21A SOT-227B | Dotaz |
 |
PSMN2R2-40PS,127 | Nexperia USA Inc. | MOSFET N-CH 40V 100A TO220AB | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers