Koupit IXFA30N60X s BYCHPS
Koupit se zárukou
IXFA30N60X
- Part Number:
- IXFA30N60X
- Výrobce:
- IXYS Corporation
- Popis:
- MOSFET N-CH 600V 30A TO-263
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 12692 Pieces
- Datový list:
- IXFA30N60X.pdf
Úvod
BYCHIPS je distribuční odrůda pro IXFA30N60X, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IXFA30N60X e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4.5V @ 4mA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-263 |
| Série: | HiPerFET™ |
| RDS On (Max) @ Id, Vgs: | 155 mOhm @ 15A, 10V |
| Ztráta energie (Max): | 500W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 8 Weeks |
| Výrobní číslo výrobce: | IXFA30N60X |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 2270pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 56nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 600V 30A (Tc) 500W (Tc) Surface Mount TO-263 |
| Drain na zdroj napětí (Vdss): | 600V |
| Popis: | MOSFET N-CH 600V 30A TO-263 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 30A (Tc) |
| Email: | [email protected] |
Související díly pro IXFA30N60X
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
RTF010P02TL | Rohm Semiconductor | MOSFET P-CH 20V 1A TUMT3 | Dotaz |
 |
IXFA3N120TRL | IXYS | MOSFET N-CH 1200V 3A TO-263 | Dotaz |
 |
PMR780SN,115 | NXP USA Inc. | MOSFET N-CH 60V 0.55A SOT416 | Dotaz |
 |
NVMFS5C442NLT1G | ON Semiconductor | MOSFET N-CH 40V 27A SO8FL | Dotaz |
 |
STB16NF06LT4 | STMicroelectronics | MOSFET N-CH 60V 16A D2PAK | Dotaz |
 |
BUK655R0-75C,127 | NXP USA Inc. | MOSFET N-CH 75V 120A TO220AB | Dotaz |
 |
STU12N60M2 | STMicroelectronics | MOSFET N-CH 600V 9A IPAK | Dotaz |
 |
NVTFS5820NLWFTWG | ON Semiconductor | MOSFET N-CH 60V 37A U8FL | Dotaz |
 |
BUK9832-55A,115 | NXP USA Inc. | MOSFET N-CH 55V 12A SOT223 | Dotaz |
|
IXFA3N80 | IXYS | MOSFET N-CH 800V 3.6A TO-263 | Dotaz |
 |
IRF7811 | Infineon Technologies | MOSFET N-CH 28V 14A 8-SOIC | Dotaz |
 |
STF22NM60N | STMicroelectronics | MOSFET N-CH 600V 16A TO-220FP | Dotaz |
|
IXFA36N30P3 | IXYS | MOSFET N-CH 300V 36A TO-263AA | Dotaz |
 |
IXFA34N65X2 | IXYS | MOSFET N-CH 650V 34A TO-263 | Dotaz |
 |
IRL530 | Vishay Siliconix | MOSFET N-CH 100V 15A TO-220AB | Dotaz |
|
NVMFS5C410NT1G | ON Semiconductor | MOSFET N-CH 40V SO8FL | Dotaz |
 |
RF4E070GNTR | Rohm Semiconductor | MOSFET N-CH 30V 7A 8-HUML | Dotaz |
|
IXFA3N120 | IXYS | MOSFET N-CH 1200V 3A TO-263 | Dotaz |
 |
IXTH30N60P | IXYS | MOSFET N-CH 600V 30A TO-247 | Dotaz |
|
STF28NM50N | STMicroelectronics | MOSFET N-CH 500V 21A TO-220FP | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog