Koupit IRFBG30PBF s BYCHPS
Koupit se zárukou
IRFBG30PBF
- Part Number:
- IRFBG30PBF
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET N-CH 1000V 3.1A TO-220AB
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 14278 Pieces
- Datový list:
- 1.IRFBG30PBF.pdf2.IRFBG30PBF.pdf
Úvod
BYCHIPS je distribuční odrůda pro IRFBG30PBF, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IRFBG30PBF e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-220AB |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 5 Ohm @ 1.9A, 10V |
| Ztráta energie (Max): | 125W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-220-3 |
| Ostatní jména: | *IRFBG30PBF |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 11 Weeks |
| Výrobní číslo výrobce: | IRFBG30PBF |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 980pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 80nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 1000V (1kV) 3.1A (Tc) 125W (Tc) Through Hole TO-220AB |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 10V |
| Drain na zdroj napětí (Vdss): | 1000V (1kV) |
| Popis: | MOSFET N-CH 1000V 3.1A TO-220AB |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 3.1A (Tc) |
| Email: | [email protected] |
Související díly pro IRFBG30PBF
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|---|---|---|---|---|
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IRFBG20L | Vishay Siliconix | MOSFET N-CH 1000V 1.4A TO-262 | Dotaz |
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IRFBG20PBF | Vishay Siliconix | MOSFET N-CH 1000V 1.4A TO-220AB | Dotaz |
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IPS040N03LGAKMA1 | Infineon Technologies | MOSFET N-CHANNEL 30V 90A TO251-3 | Dotaz |
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STW42N60M2-EP | STMicroelectronics | MOSFET N-CH 600V 34A EP TO247 | Dotaz |
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BSS119L6327HTSA1 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 | Dotaz |
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