Koupit IRF630NS s BYCHPS
Koupit se zárukou
IRF630NS
- Part Number:
- IRF630NS
- Popis:
- MOSFET N-CH 200V 9.3A D2PAK
- Stav volného vedení / RoHS:
- Obsahuje olověný / RoHS neodpovídající
- dostupné množství:
- 17864 Pieces
- Datový list:
- IRF630NS.pdf
Úvod
BYCHIPS je distribuční odrůda pro IRF630NS, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IRF630NS e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | D2PAK |
| Série: | HEXFET® |
| RDS On (Max) @ Id, Vgs: | 300 mOhm @ 5.4A, 10V |
| Ztráta energie (Max): | 82W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Ostatní jména: | *IRF630NS |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | IRF630NS |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 575pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 35nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 200V 9.3A (Tc) 82W (Tc) Surface Mount D2PAK |
| Drain na zdroj napětí (Vdss): | 200V |
| Popis: | MOSFET N-CH 200V 9.3A D2PAK |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 9.3A (Tc) |
| Email: | [email protected] |
Související díly pro IRF630NS
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IRF630NSTRR | Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | Dotaz |
 |
IRF630NPBF | Infineon Technologies | MOSFET N-CH 200V 9.3A TO-220AB | Dotaz |
|
IRF630NSTRRPBF | Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | Dotaz |
|
IRF630NSTRLPBF | Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | Dotaz |
 |
IRF630NLPBF | Infineon Technologies | MOSFET N-CH 200V 9.3A TO-262 | Dotaz |
|
IRF630NL | Infineon Technologies | MOSFET N-CH 200V 9.3A TO-262 | Dotaz |
|
IRF630NSPBF | Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | Dotaz |
 |
SI5435BDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 4.3A 1206-8 | Dotaz |
 |
IRFHM9331TRPBF | Infineon Technologies | MOSFET P-CH 30V 11A 8-PQFN | Dotaz |
 |
BSP170PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | Dotaz |
 |
IRF8113TR | Infineon Technologies | MOSFET N-CH 30V 17.2A 8-SOIC | Dotaz |
 |
APT11N80KC3G | Microsemi Corporation | MOSFET N-CH 800V 11A TO-220 | Dotaz |
 |
IXFH14N80P | IXYS | MOSFET N-CH 800V 14A TO-247 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog