Koupit IPG20N06S4L11ATMA1 s BYCHPS
Koupit se zárukou
IPG20N06S4L11ATMA1
- Part Number:
- IPG20N06S4L11ATMA1
- Popis:
- MOSFET 2N-CH 8TDSON
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 12971 Pieces
- Datový list:
- IPG20N06S4L11ATMA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPG20N06S4L11ATMA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPG20N06S4L11ATMA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2.2V @ 28µA |
|---|---|
| Dodavatel zařízení Package: | PG-TDSON-8-4 |
| Série: | Automotive, AEC-Q101, OptiMOS™ |
| RDS On (Max) @ Id, Vgs: | 11.2 mOhm @ 17A, 10V |
| Power - Max: | 65W |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | 8-PowerVDFN |
| Ostatní jména: | SP000705550 |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 26 Weeks |
| Výrobní číslo výrobce: | IPG20N06S4L11ATMA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 4020pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 53nC @ 10V |
| Typ FET: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Rozšířený popis: | Mosfet Array 2 N-Channel (Dual) 60V 20A 65W Surface Mount PG-TDSON-8-4 |
| Drain na zdroj napětí (Vdss): | 60V |
| Popis: | MOSFET 2N-CH 8TDSON |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 20A |
| Email: | [email protected] |
Související díly pro IPG20N06S4L11ATMA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPG20N06S4L26AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Dotaz |
|
IPG20N06S4L11AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Dotaz |
 |
IPG20N06S3L-35 | Infineon Technologies | MOSFET 2N-CH 55V 20A TDSON-8 | Dotaz |
|
IPG20N06S4L26ATMA1 | Infineon Technologies | MOSFET 2N-CH 60V 20A TDSON-8 | Dotaz |
|
IPG20N06S415ATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Dotaz |
|
IPG20N06S4L14ATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Dotaz |
|
IPG20N06S4L14AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Dotaz |
 |
IPG20N06S415AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Dotaz |
|
IPG20N06S415ATMA2 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Dotaz |
|
IPG20N06S4L14ATMA2 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Dotaz |
|
IPG20N06S2L35ATMA1 | Infineon Technologies | MOSFET 2N-CH 55V 20A TDSON-8-4 | Dotaz |
|
IPG20N06S2L35AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Dotaz |
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