Koupit IPD50N06S4L12ATMA2 s BYCHPS
Koupit se zárukou
IPD50N06S4L12ATMA2
- Part Number:
- IPD50N06S4L12ATMA2
- Popis:
- MOSFET N-CH 60V 50A TO252-3
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 13138 Pieces
- Datový list:
- IPD50N06S4L12ATMA2.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPD50N06S4L12ATMA2, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPD50N06S4L12ATMA2 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2.2V @ 20µA |
|---|---|
| Vgs (Max): | ±16V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO252-3-11 |
| Série: | Automotive, AEC-Q101, OptiMOS™ |
| RDS On (Max) @ Id, Vgs: | 12 mOhm @ 50A, 10V |
| Ztráta energie (Max): | 50W (Tc) |
| Obal: | Original-Reel® |
| Paket / krabice: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Ostatní jména: | IPD50N06S4L12ATMA2DKR |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 26 Weeks |
| Výrobní číslo výrobce: | IPD50N06S4L12ATMA2 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 2890pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 40nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 60V 50A (Tc) 50W (Tc) Surface Mount PG-TO252-3-11 |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 4.5V, 10V |
| Drain na zdroj napětí (Vdss): | 60V |
| Popis: | MOSFET N-CH 60V 50A TO252-3 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 50A (Tc) |
| Email: | [email protected] |
Související díly pro IPD50N06S4L12ATMA2
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPD50N06S409ATMA1 | Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 | Dotaz |
|
IPD50N06S4L12ATMA1 | Infineon Technologies | MOSFET N-CH 60V 50A TO252-3-11 | Dotaz |
|
IPD50N06S2L13ATMA2 | Infineon Technologies | MOSFET N-CH 55V 50A TO252-3 | Dotaz |
|
IPD50N06S4L08ATMA1 | Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 | Dotaz |
|
IPD50N06S2L13ATMA1 | Infineon Technologies | MOSFET N-CH 55V 50A TO252-3 | Dotaz |
|
IPD50N06S214ATMA1 | Infineon Technologies | MOSFET N-CH 55V 50A TO252-3 | Dotaz |
|
IPD50N06S409ATMA2 | Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 | Dotaz |
|
IPD50N06S214ATMA2 | Infineon Technologies | MOSFET N-CH 55V 50A TO252-3 | Dotaz |
 |
IPD50N04S408ATMA1 | Infineon Technologies | MOSFET N-CH 40V 50A TO252-3-313 | Dotaz |
|
IPD50N03S4L06ATMA1 | Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | Dotaz |
|
IPD50N06S4L08ATMA2 | Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 | Dotaz |
|
IPD50N04S4L08ATMA1 | Infineon Technologies | MOSFET N-CH 40V 50A TO252-3-313 | Dotaz |
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