Koupit IPD30N06S2L23ATMA1 s BYCHPS
Koupit se zárukou
IPD30N06S2L23ATMA1
- Part Number:
- IPD30N06S2L23ATMA1
- Popis:
- MOSFET N-CH 55V 30A TO252-3
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 15779 Pieces
- Datový list:
- IPD30N06S2L23ATMA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPD30N06S2L23ATMA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPD30N06S2L23ATMA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2V @ 50µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO252-3 |
| Série: | OptiMOS™ |
| RDS On (Max) @ Id, Vgs: | 23 mOhm @ 22A, 10V |
| Ztráta energie (Max): | 100W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Ostatní jména: | IPD30N06S2L-23 IPD30N06S2L-23-ND IPD30N06S2L-23TR-ND IPD30N06S2L23 SP000252168 |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | IPD30N06S2L23ATMA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 1091pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 42nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3 |
| Drain na zdroj napětí (Vdss): | 55V |
| Popis: | MOSFET N-CH 55V 30A TO252-3 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 30A (Tc) |
| Email: | [email protected] |
Související díly pro IPD30N06S2L23ATMA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPD30N06S2-15 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Dotaz |
|
IPD30N06S2L-13 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Dotaz |
|
IPD30N06S2L13ATMA4 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Dotaz |
|
IPD30N06S223ATMA1 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Dotaz |
|
IPD30N06S2L23ATMA3 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Dotaz |
|
IPD30N06S223ATMA2 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Dotaz |
|
IPD30N06S4L23ATMA2 | Infineon Technologies | MOSFET N-CH 60V 30A TO252-3 | Dotaz |
|
IPD30N06S4L23ATMA1 | Infineon Technologies | MOSFET N-CH 60V 30A TO252-3 | Dotaz |
|
IPD30N06S215ATMA2 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Dotaz |
|
IPD30N08S2L-21 | Infineon Technologies | MOSFET N-CH 75V 30A TO252-3 | Dotaz |
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