Koupit IPAW60R180P7SXKSA1 s BYCHPS
Koupit se zárukou
IPAW60R180P7SXKSA1
- Part Number:
- IPAW60R180P7SXKSA1
- Popis:
- MOSFET N-CH 650V 18A TO220
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 19744 Pieces
- Datový list:
- IPAW60R180P7SXKSA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPAW60R180P7SXKSA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPAW60R180P7SXKSA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 280µA |
|---|---|
| Vgs (Max): | ±20V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO220 Full Pack |
| Série: | CoolMOS™ P7 |
| RDS On (Max) @ Id, Vgs: | 180 mOhm @ 5.6A, 10V |
| Ztráta energie (Max): | 26W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-220-3 Full Pack |
| Ostatní jména: | SP001606072 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 12 Weeks |
| Výrobní číslo výrobce: | IPAW60R180P7SXKSA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 1081pF @ 400V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 25nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 650V 18A (Tc) 26W (Tc) Through Hole PG-TO220 Full Pack |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 10V |
| Drain na zdroj napětí (Vdss): | 650V |
| Popis: | MOSFET N-CH 650V 18A TO220 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 18A (Tc) |
| Email: | [email protected] |
Související díly pro IPAW60R180P7SXKSA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPAW60R360P7SXKSA1 | Infineon Technologies | MOSFET N-CH 650V 9A TO220 | Dotaz |
 |
IPAW60R600CEXKSA1 | Infineon Technologies | MOSFET N-CH 600V TO220-3 | Dotaz |
 |
IRFS4228PBF | Infineon Technologies | MOSFET N-CH 150V 83A D2PAK | Dotaz |
 |
SI2309DS-T1-E3 | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 | Dotaz |
 |
IRFR9020PBF | Vishay Siliconix | MOSFET P-CH 50V 9.9A DPAK | Dotaz |
 |
MTP2P50E | ON Semiconductor | MOSFET P-CH 500V 2A TO-220AB | Dotaz |
|
IPAW60R190CEXKSA1 | Infineon Technologies | MOSFET N-CH 600V TO220-3 | Dotaz |
|
IPAW60R380CEXKSA1 | Infineon Technologies | MOSFET N-CH 600V TO220-3 | Dotaz |
 |
IXTY01N100D | IXYS | MOSFET N-CH 1000V 0.1A TO-252AA | Dotaz |
|
IPAW60R280CEXKSA1 | Infineon Technologies | MOSFET N-CH 600V TO220-3 | Dotaz |
|
IXTP32N65X | IXYS | MOSFET N-CH 650V 32A TO-220 | Dotaz |
|
MMIX1T600N04T2 | IXYS | MOSFET N-CH 40V 600A SMPD | Dotaz |
 |
EKI04027 | Sanken | MOSFET N-CH 40V 85A TO-220 | Dotaz |
|
IPB14N03LAT | Infineon Technologies | MOSFET N-CH 25V 30A D2PAK | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers