Koupit GKI06109 s BYCHPS
Koupit se zárukou
GKI06109
- Part Number:
- GKI06109
- Výrobce:
- Sanken Electric Co., Ltd.
- Popis:
- MOSFET N-CH 60V 9A 8DFN
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16959 Pieces
- Datový list:
- GKI06109.pdf
Úvod
BYCHIPS je distribuční odrůda pro GKI06109, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu GKI06109 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2.5V @ 650µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | 8-DFN (5x6) |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 8.9 mOhm @ 23.6A, 10V |
| Ztráta energie (Max): | 3.1W (Ta), 59W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | 8-PowerTDFN |
| Ostatní jména: | GKI06109 DK GKI06109TR |
| Provozní teplota: | 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 12 Weeks |
| Výrobní číslo výrobce: | GKI06109 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 2520pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 38.6nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 60V 9A (Ta) 3.1W (Ta), 59W (Tc) Surface Mount 8-DFN (5x6) |
| Drain na zdroj napětí (Vdss): | 60V |
| Popis: | MOSFET N-CH 60V 9A 8DFN |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 9A (Ta) |
| Email: | [email protected] |
Související díly pro GKI06109
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
GKI06185 | Sanken | MOSFET N-CH 60V 7A 8DFN | Dotaz |
 |
IXTH48N20T | IXYS | MOSFET N-CH 200V 48A TO-247 | Dotaz |
 |
R6076ENZ1C9 | Rohm Semiconductor | MOSFET N-CH 600V 76A TO247 | Dotaz |
 |
CSD16322Q5C | Texas Instruments | MOSFET N-CH 25V 97A 8SON | Dotaz |
 |
CPH6355-TL-W | ON Semiconductor | MOSFET P-CH 30V 3A CPH6 | Dotaz |
 |
IXFJ20N85X | IXYS | MOSFET N-CH 850V 9.5A TO247-3 | Dotaz |
 |
IPD70N10S312ATMA1 | Infineon Technologies | MOSFET N-CH 100V 70A TO252-3 | Dotaz |
 |
DMG2301L-13 | Diodes Incorporated | MOSFET P-CH 20V 3A SOT23 | Dotaz |
|
GKI06259 | Sanken | MOSFET N-CH 60V 6A 8DFN | Dotaz |
 |
SI4412ADY-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 5.8A 8-SOIC | Dotaz |
 |
IPB100N10S3-05 | Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | Dotaz |
|
GKI06071 | Sanken | MOSFET N-CH 60V 11A 8DFN | Dotaz |
|
IPB093N04LGATMA1 | Infineon Technologies | MOSFET N-CH 40V 50A TO263-3 | Dotaz |
 |
BUK78150-55A,135 | NXP USA Inc. | MOSFET N-CH 55V 5.5A SOT223 | Dotaz |
 |
RRS110N03TB1 | Rohm Semiconductor | MOSFET N-CH 30V 11A 8-SOIC | Dotaz |
|
ZXM41N10FTC | Diodes Incorporated | MOSFET N-CH 100V 170MA SOT23-3 | Dotaz |
|
ZVN3306FTC | Diodes Incorporated | MOSFET N-CH 60V 0.15A SOT23-3 | Dotaz |
 |
FQPF6N80 | Fairchild/ON Semiconductor | MOSFET N-CH 800V 3.3A TO-220F | Dotaz |
|
IRLZ44ZSPBF | Infineon Technologies | MOSFET N-CH 55V 51A D2PAK | Dotaz |
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