Koupit EMG3T2R s BYCHPS
Koupit se zárukou
EMG3T2R
- Part Number:
- EMG3T2R
- Výrobce:
- LAPIS Semiconductor
- Popis:
- TRANS 2NPN PREBIAS 0.15W EMT3
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16836 Pieces
- Datový list:
- EMG3T2R.pdf
Úvod
BYCHIPS je distribuční odrůda pro EMG3T2R, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu EMG3T2R e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Napětí - kolektoru emitoru Breakdown (Max): | 50V |
|---|---|
| VCE Saturation (Max) @ IB, IC: | 150mV @ 250µA, 5mA |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Dodavatel zařízení Package: | EMT3 |
| Série: | - |
| Odpor - Vysílač Base (R2) (Ohm): | - |
| Odpor - Base (R1) (Ohm): | 4.7k |
| Power - Max: | 150mW |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | SC-75, SOT-416 |
| Ostatní jména: | EMG3T2R-ND EMG3T2RTR |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 10 Weeks |
| Výrobní číslo výrobce: | EMG3T2R |
| Frekvence - Přechod: | 250MHz |
| Rozšířený popis: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT3 |
| Popis: | TRANS 2NPN PREBIAS 0.15W EMT3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
| Aktuální - sběratel Cutoff (Max): | 500nA (ICBO) |
| Proud - Collector (Ic) (Max): | 100mA |
| Email: | [email protected] |
Související díly pro EMG3T2R
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
BCR185SH6327XTSA1 | Infineon Technologies | TRANS 2PNP PREBIAS 0.25W SOT363 | Dotaz |
 |
UP0431400L | Panasonic Electronic Components | TRANS PREBIAS NPN/PNP SSMINI6 | Dotaz |
 |
DDC123JU-7 | Diodes Incorporated | TRANS 2NPN PREBIAS 0.2W SOT363 | Dotaz |
 |
PEMH18,115 | Nexperia USA Inc. | TRANS 2NPN PREBIAS 0.3W SOT666 | Dotaz |
 |
XN0621100L | Panasonic Electronic Components | TRANS PREBIAS DUAL NPN MINI6 | Dotaz |
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