Koupit DSEI30-10AR s BYCHPS
Koupit se zárukou
DSEI30-10AR
- Part Number:
- DSEI30-10AR
- Výrobce:
- IXYS Corporation
- Popis:
- DIODE GEN 1KV 30A ISOPLUS247
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 15283 Pieces
- Datový list:
- DSEI30-10AR.pdf
Úvod
BYCHIPS je distribuční odrůda pro DSEI30-10AR, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu DSEI30-10AR e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Napětí - Forward (VF) (Max) @-li: | 2.4V @ 36A |
|---|---|
| Napětí - DC Reverse (Vr) (Max): | 1000V (1kV) |
| Dodavatel zařízení Package: | ISOPLUS247™ |
| Rychlost: | Fast Recovery = 200mA (Io) |
| Série: | - |
| Reverse Time Recovery (TRR): | 50ns |
| Obal: | Tube |
| Paket / krabice: | ISOPLUS247™ |
| Ostatní jména: | DSEI3010AR |
| Provozní teplota - spojení: | -40°C ~ 150°C |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 8 Weeks |
| Výrobní číslo výrobce: | DSEI30-10AR |
| Rozšířený popis: | Diode Standard 1000V (1kV) 30A Through Hole ISOPLUS247™ |
| Diode Type: | Standard |
| Popis: | DIODE GEN 1KV 30A ISOPLUS247 |
| Proud - zpìtný únikový @ Vr: | 750µA @ 1000V |
| Proud - Průměrná Rektifikova (Io): | 30A |
| Kapacitní @ Vr, F: | - |
| Email: | [email protected] |
Související díly pro DSEI30-10AR
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
VS-31DQ04TR | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 40V 3.3A C16 | Dotaz |
 |
DSEI30-10A | IXYS | DIODE GEN PURP 1KV 30A TO247AD | Dotaz |
 |
BAS40/ZLVL | NXP USA Inc. | DIODE SCHOTTKY 40V 120MA SOT23 | Dotaz |
 |
MA2J70400L | Panasonic Electronic Components | DIODE SCHOTTKY 20V 200MA SMINI2 | Dotaz |
 |
1N4148WX-TP | Micro Commercial Co | DIODE GEN PURP 75V 150MA SOD323 | Dotaz |
 |
SIDC38D60C6 | Infineon Technologies | DIODE GEN PURP 600V 150A WAFER | Dotaz |
 |
DPG10I400PA | IXYS | DIODE GEN PURP 400V 10A TO220AC | Dotaz |
|
DSEI30-12A | IXYS | DIODE GEN PURP 1.2KV 26A TO247AD | Dotaz |
 |
AR4PMHM3_A/H | Vishay Semiconductor Diodes Division | DIODE AVALANCH 1KV 1.8A TO277A | Dotaz |
 |
JAN1N3612 | Microsemi Corporation | DIODE GEN PURP 400V 1A AXIAL | Dotaz |
|
DSEI30-06A | IXYS | DIODE GEN PURP 600V 37A TO247AD | Dotaz |
 |
NSB8DT-E3/45 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 8A TO263AB | Dotaz |
 |
DSEI36-06AS-TUBE | IXYS | DIODE GEN PURP 600V 37A TO263AB | Dotaz |
 |
JANTX1N5415US | Microsemi Corporation | DIODE GEN PURP 50V 3A B-MELF | Dotaz |
 |
JANTX1N5194 | Microsemi Corporation | DIODE GEN PURP 70V 50MA DO35 | Dotaz |
|
DSEI36-06AS-TUB | IXYS | DIODE GEN PURP 600V 37A TO263AB | Dotaz |
 |
1N3611GP-E3/73 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AL | Dotaz |
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