Koupit DMN2100UDM-7 s BYCHPS
Koupit se zárukou
DMN2100UDM-7
- Part Number:
- DMN2100UDM-7
- Výrobce:
- Diodes Incorporated
- Popis:
- MOSFET N-CH 20V 3.3A SOT-26
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 14499 Pieces
- Datový list:
- DMN2100UDM-7.pdf
Úvod
BYCHIPS je distribuční odrůda pro DMN2100UDM-7, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu DMN2100UDM-7 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 1V @ 250µA |
|---|---|
| Vgs (Max): | ±8V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | SOT-26 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 55 mOhm @ 6A, 4.5V |
| Ztráta energie (Max): | 1W (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | SOT-23-6 |
| Ostatní jména: | DMN2100UDM7 DMN2100UDMDITR |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 8 Weeks |
| Výrobní číslo výrobce: | DMN2100UDM-7 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 555pF @ 10V |
| Nabíjení brány (Qg) (Max) @ Vgs: | - |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 20V 3.3A (Ta) 1W (Ta) Surface Mount SOT-26 |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 1.5V, 4.5V |
| Drain na zdroj napětí (Vdss): | 20V |
| Popis: | MOSFET N-CH 20V 3.3A SOT-26 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 3.3A (Ta) |
| Email: | [email protected] |
Související díly pro DMN2100UDM-7
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IRFI710G | Vishay Siliconix | MOSFET N-CH 400V 1.6A TO220FP | Dotaz |
 |
IRF7416QTRPBF | Infineon Technologies | MOSFET P-CH 30V 10A 8-SOIC | Dotaz |
 |
DMN2170U-7 | Diodes Incorporated | MOSFET N-CH 20V 2.3A SOT23-3 | Dotaz |
 |
FQPF46N15 | Fairchild/ON Semiconductor | MOSFET N-CH 150V 25.6A TO-220F | Dotaz |
|
DMN2114SN-7 | Diodes Incorporated | MOSFET N-CH 20V 1.2A SC59-3 | Dotaz |
 |
IRF1010ZS | Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | Dotaz |
 |
TPS1100PW | Texas Instruments | MOSFET P-CH 15V 1.27A 8-TSSOP | Dotaz |
 |
IXTQ140N10P | IXYS | MOSFET N-CH 100V 140A TO-3P | Dotaz |
 |
DMN21D2UFB-7B | Diodes Incorporated | MOSFET N-CH 20V 0.76A 3DFN | Dotaz |
 |
STD13NM60ND | STMicroelectronics | MOSFET N-CH 600V 11A DPAK | Dotaz |
 |
SI4102DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | Dotaz |
 |
IXTN102N65X2 | IXYS | MOSFET N-CH 650V 76A X2 SOT-227 | Dotaz |
|
DMN2112SN-7 | Diodes Incorporated | MOSFET N-CH 20V 1.2A SC59-3 | Dotaz |
 |
ATP405-TL-HX | ON Semiconductor | MOSFET N-CH DPAK | Dotaz |
|
DMN2104L-7 | Diodes Incorporated | MOSFET N-CH 20V 4.3A SOT-23 | Dotaz |
 |
NDP7050L | Fairchild/ON Semiconductor | MOSFET N-CH 50V 75A TO-220AB | Dotaz |
 |
FQI8P10TU | Fairchild/ON Semiconductor | MOSFET P-CH 100V 8A I2PAK | Dotaz |
 |
APT20M19JVR | Microsemi Corporation | MOSFET N-CH 200V 112A SOT-227 | Dotaz |
 |
IXTK60N50L2 | IXYS | MOSFET N-CH 500V 60A TO-264 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog