Koupit DMG4N60SJ3 s BYCHPS
Koupit se zárukou
DMG4N60SJ3
- Part Number:
- DMG4N60SJ3
- Výrobce:
- Diodes Incorporated
- Popis:
- MOSFET NCH 600V 3A TO251
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 15367 Pieces
- Datový list:
- DMG4N60SJ3.pdf
Úvod
BYCHIPS je distribuční odrůda pro DMG4N60SJ3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu DMG4N60SJ3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4.5V @ 250µA |
|---|---|
| Dodavatel zařízení Package: | TO-251 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 2.5 Ohm @ 2A, 10V |
| Power - Max: | 41W |
| Obal: | Tube |
| Paket / krabice: | TO-251-3 Long Leads, IPak, TO-251AB |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 8 Weeks |
| Výrobní číslo výrobce: | DMG4N60SJ3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 532pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 14.3nC @ 10V |
| Typ FET: | MOSFET N-Channel, Metal Oxide |
| FET Feature: | Standard |
| Rozšířený popis: | Mosfet Array MOSFET N-Channel, Metal Oxide 600V 3A (Tc) 41W Through Hole TO-251 |
| Drain na zdroj napětí (Vdss): | 600V |
| Popis: | MOSFET NCH 600V 3A TO251 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 3A (Tc) |
| Email: | [email protected] |
Související díly pro DMG4N60SJ3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
DMG4N60SCT | Diodes Incorporated | MOSFET NCH 600V 4.5A TO220 | Dotaz |
 |
DMHC10H170SFJ-13 | Diodes Incorporated | MOSFET 2N/2P-CH 100V DFN5045-12 | Dotaz |
 |
BSZ0909NDXTMA1 | Infineon Technologies | MOSFET 2N-CH 30V 20A 8WISON | Dotaz |
 |
APTMC120AM20CT1AG | Microsemi Corporation | MOSFET 2N-CH 1200V 143A SP1 | Dotaz |
 |
AO8801 | Alpha & Omega Semiconductor Inc. | MOSFET P-CH DUAL 8TSSOP | Dotaz |
 |
DMG4N65CTI | Diodes Incorporated | MOSFET N-CH 650V 4A ITO-220AB | Dotaz |
 |
DMG4N60SK3-13 | Diodes Incorporated | MOSFET BVDSS: 501V 650V TO252 T& | Dotaz |
 |
SIZ342DT-T1-GE3 | Vishay Siliconix | MOSFET DL N-CH 30V POWERPAIR3X3 | Dotaz |
 |
FDY3001NZ | Fairchild/ON Semiconductor | MOSFET 2N-CH 20V 0.2A SOT-563F | Dotaz |
 |
AO4620 | Alpha & Omega Semiconductor Inc. | MOSFET N/P-CH 30V 8-SOIC | Dotaz |
|
DMG4N65CT | Diodes Incorporated | MOSFET N CH 650V 4A TO220-3 | Dotaz |
 |
VMK90-02T2 | IXYS | MOSFET 2N-CH 200V 83A TO-240AA | Dotaz |
 |
SI4816BDY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.8A 8-SOIC | Dotaz |
 |
IRF7343PBF | Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | Dotaz |
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