Koupit DMG302PU-13 s BYCHPS
Koupit se zárukou
DMG302PU-13
- Part Number:
- DMG302PU-13
- Výrobce:
- Diodes Incorporated
- Popis:
- MOSFET P-CH 25V .17A SOT-23
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16279 Pieces
- Datový list:
- DMG302PU-13.pdf
Úvod
BYCHIPS je distribuční odrůda pro DMG302PU-13, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu DMG302PU-13 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 1.5V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | SOT-23 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 10 Ohm @ 200mA, 4.5V |
| Ztráta energie (Max): | 320mW (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-236-3, SC-59, SOT-23-3 |
| Ostatní jména: | DMG302PU-13DITR |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 16 Weeks |
| Výrobní číslo výrobce: | DMG302PU-13 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 27.2pF @ 10V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 0.35nC @ 4.5V |
| Typ FET: | P-Channel |
| FET Feature: | - |
| Rozšířený popis: | P-Channel 25V 170mA (Ta) 320mW (Ta) Surface Mount SOT-23 |
| Drain na zdroj napětí (Vdss): | 25V |
| Popis: | MOSFET P-CH 25V .17A SOT-23 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 170mA (Ta) |
| Email: | [email protected] |
Související díly pro DMG302PU-13
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
PH5330E,115 | NXP USA Inc. | MOSFET N-CH 30V 80A LFPAK | Dotaz |
 |
NVMFS5C404NLWFT1G | ON Semiconductor | MOSFET N-CH 40V 49A SO8FL | Dotaz |
 |
ZVN3320ASTOA | Diodes Incorporated | MOSFET N-CH 200V 0.1A TO92-3 | Dotaz |
 |
IXFL82N60P | IXYS | MOSFET N-CH 600V 55A ISOPLUS 264 | Dotaz |
 |
DMG302PU-7 | Diodes Incorporated | MOSFET P-CH 25V .17A SOT-23 | Dotaz |
 |
APT6017LFLLG | Microsemi Corporation | MOSFET N-CH 600V 35A TO-264 | Dotaz |
 |
IRFR7446PBF | Infineon Technologies | MOSFET N-CH 40V 56A DPAK | Dotaz |
 |
IRL8113 | Infineon Technologies | MOSFET N-CH 30V 105A TO-220AB | Dotaz |
|
DMG301NU-7 | Diodes Incorporated | MOSFET N-CH 25V .26A SOT-23 | Dotaz |
 |
TP0610K-T1 | Vishay Siliconix | MOSFET P-CH 60V 185MA SOT23 | Dotaz |
 |
IRFIBC20G | Vishay Siliconix | MOSFET N-CH 600V 1.7A TO220FP | Dotaz |
 |
DMN1019UVT-7 | Diodes Incorporated | MOSFET N-CH 12V 10.7A TSOT26 | Dotaz |
 |
IPP50R399CPXKSA1 | Infineon Technologies | MOSFET N-CH 500V 9A TO-220 | Dotaz |
 |
IRFBF20S | Vishay Siliconix | MOSFET N-CH 900V 1.7A D2PAK | Dotaz |
 |
SI7860DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 11A PPAK SO-8 | Dotaz |
 |
SI5857DU-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 6A PPAK CHIPFET | Dotaz |
|
DMG301NU-13 | Diodes Incorporated | MOSFET N-CH 25V .26A SOT-23 | Dotaz |
 |
STF15N80K5 | STMicroelectronics | MOSFET N-CH 800V 14A TO-220FP | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers