Koupit CSD85312Q3E s BYCHPS
Koupit se zárukou
CSD85312Q3E
- Part Number:
- CSD85312Q3E
- Výrobce:
- Popis:
- MOSFET 2N-CH 20V 39A 8VSON
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 18673 Pieces
- Datový list:
- CSD85312Q3E.pdf
Úvod
BYCHIPS je distribuční odrůda pro CSD85312Q3E, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu CSD85312Q3E e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 1.4V @ 250µA |
|---|---|
| Dodavatel zařízení Package: | 8-VSON (3.3x3.3) |
| Série: | NexFET™ |
| RDS On (Max) @ Id, Vgs: | 12.4 mOhm @ 10A, 8V |
| Power - Max: | 2.5W |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | 8-PowerVDFN |
| Ostatní jména: | CSD85312Q3E-ND |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 6 Weeks |
| Výrobní číslo výrobce: | CSD85312Q3E |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 2390pF @ 10V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 15.2nC @ 4.5V |
| Typ FET: | 2 N-Channel (Dual) Common Source |
| FET Feature: | Logic Level Gate, 5V Drive |
| Rozšířený popis: | Mosfet Array 2 N-Channel (Dual) Common Source 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3) |
| Drain na zdroj napětí (Vdss): | 20V |
| Popis: | MOSFET 2N-CH 20V 39A 8VSON |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 39A |
| Email: | [email protected] |
Související díly pro CSD85312Q3E
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
ZXMD65N03N8TA | Diodes Incorporated | MOSFET 2N-CH 30V 6.5A 8-SOIC | Dotaz |
 |
ALD210802SCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | Dotaz |
 |
SI9936DY,518 | NXP USA Inc. | MOSFET 2N-CH 30V 5A SOT96-1 | Dotaz |
 |
IRF7757TR | Infineon Technologies | MOSFET 2N-CH 20V 4.8A TSSOP-8 | Dotaz |
|
CSD85302L | Texas Instruments | MOSFET 2N-CH 20V 5A | Dotaz |
 |
APTC60AM18SCG | Microsemi Corporation | MOSFET 2N-CH 600V 143A SP6 | Dotaz |
|
CSD85302LT | Texas Instruments | MOSFET 2N-CH | Dotaz |
|
FDS9945 | Fairchild/ON Semiconductor | MOSFET 2N-CH 60V 3.5A 8-SO | Dotaz |
 |
SI7960DP-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 60V 6.2A PPAK SO-8 | Dotaz |
 |
APTML202UM18R010T3AG | Microsemi Corporation | MOSFET 2N-CH 200V 109A SP3 | Dotaz |
|
CSD85301Q2 | Texas Instruments | MOSFET 2N-CH 20V 5A 6WSON | Dotaz |
 |
SI3951DV-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 20V 2.7A 6-TSOP | Dotaz |
 |
SI1028X-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V SC89-6 | Dotaz |
|
APTC80AM75SCG | Microsemi Corporation | MOSFET 2N-CH 800V 56A SP6 | Dotaz |
|
CSD85301Q2T | Texas Instruments | MOSFET 2N-CH 20V 5A 6WSON | Dotaz |
 |
SIB900EDK-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 20V 1.5A SC-75-6 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog