Koupit CSD19501KCS s BYCHPS
Koupit se zárukou
CSD19501KCS
- Part Number:
- CSD19501KCS
- Výrobce:
- Popis:
- MOSFET N-CH 80V 100A TO220
- Stav volného vedení / RoHS:
- Obsahuje olovo a RoHS
- dostupné množství:
- 19994 Pieces
- Datový list:
- CSD19501KCS.pdf
Úvod
BYCHIPS je distribuční odrůda pro CSD19501KCS, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu CSD19501KCS e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3.2V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-220-3 |
| Série: | NexFET™ |
| RDS On (Max) @ Id, Vgs: | 6.6 mOhm @ 60A, 10V |
| Ztráta energie (Max): | 217W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-220-3 |
| Ostatní jména: | 296-37286-5 CSD19501KCS-ND |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 6 Weeks |
| Výrobní číslo výrobce: | CSD19501KCS |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 3980pF @ 40V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 50nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 80V 100A (Ta) 217W (Tc) Through Hole TO-220-3 |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 6V, 10V |
| Drain na zdroj napětí (Vdss): | 80V |
| Popis: | MOSFET N-CH 80V 100A TO220 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 100A (Ta) |
| Email: | [email protected] |
Související díly pro CSD19501KCS
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
|
CSD19502Q5BT | Texas Instruments | MOSFET N-CH 80V 100A SON5X6 | Dotaz |
|
CSD19506KTTT | Texas Instruments | IC MOSFET N-CH 80V TO-220 | Dotaz |
|
CSD19503KCS | Texas Instruments | MOSFET N-CH 80V 94A TO220-3 | Dotaz |
|
CSD19536KTTT | Texas Instruments | MOSFET N-CH 100V 200A TO263 | Dotaz |
|
CSD19505KTTT | Texas Instruments | MOSFET N-CH 80V 200A DDPAK-3 | Dotaz |
|
CSD19506KCS | Texas Instruments | MOSFET N-CH 80V TO-220-3 | Dotaz |
|
CSD19531Q5A | Texas Instruments | MOSFET N-CH 100V 100A 8SON | Dotaz |
|
CSD19537Q3 | Texas Instruments | MOSFET N-CH 100V 50A 8VSON | Dotaz |
|
CSD19534Q5A | Texas Instruments | MOSFET N-CH 100V 50 8SON | Dotaz |
|
CSD19538Q3AT | Texas Instruments | MOSFET N-CH 100V 15A VSONP | Dotaz |
|
CSD19536KCS | Texas Instruments | MOSFET N-CH 100V TO-220 | Dotaz |
|
CSD19505KTT | Texas Instruments | MOSFET N-CH 80V 200A DDPAK-3 | Dotaz |
|
CSD19502Q5B | Texas Instruments | MOSFET N-CH 80V 100A 8SON | Dotaz |
|
CSD19532KTT | Texas Instruments | MOSFET N-CH 100V 200A DDPAK-3 | Dotaz |
|
CSD19506KTT | Texas Instruments | MOSFET N-CH 80V 200A DDPAK-3 | Dotaz |
|
CSD19538Q2T | Texas Instruments | MOSFET NCH 100V 13.1A 6WSON | Dotaz |
|
CSD19532Q5B | Texas Instruments | MOSFET N-CH 100V 100A 8SON | Dotaz |
|
CSD19505KCS | Texas Instruments | MOSFET N-CH 80V 150A TO-220 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers