Koupit BSS670S2LL6327HTSA1 s BYCHPS
Koupit se zárukou
BSS670S2LL6327HTSA1
- Part Number:
- BSS670S2LL6327HTSA1
- Popis:
- MOSFET N-CH 55V 540MA SOT-23
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 18675 Pieces
- Datový list:
- BSS670S2LL6327HTSA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro BSS670S2LL6327HTSA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu BSS670S2LL6327HTSA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2V @ 2.7µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-SOT23-3 |
| Série: | OptiMOS™ |
| RDS On (Max) @ Id, Vgs: | 650 mOhm @ 270mA, 10V |
| Ztráta energie (Max): | 360mW (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-236-3, SC-59, SOT-23-3 |
| Ostatní jména: | BSS670S2L L6327 BSS670S2L L6327-ND SP000247301 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | BSS670S2LL6327HTSA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 75pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 2.26nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 55V 540mA (Ta) 360mW (Ta) Surface Mount PG-SOT23-3 |
| Drain na zdroj napětí (Vdss): | 55V |
| Popis: | MOSFET N-CH 55V 540MA SOT-23 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 540mA (Ta) |
| Email: | [email protected] |
Související díly pro BSS670S2LL6327HTSA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
BSS670S2L | Infineon Technologies | MOSFET N-CH 55V 540MA SOT-23 | Dotaz |
|
BSS670S2LH6433XTMA1 | Infineon Technologies | MOSFET N-CH 55V 540MA SOT23 | Dotaz |
 |
EPC2024ENGR | EPC | TRANS GAN 40V 60A BUMPED DIE | Dotaz |
 |
FDC658AP | Fairchild/ON Semiconductor | MOSFET P-CH 30V 4A SSOT6 | Dotaz |
 |
TK4P55D(T6RSS-Q) | Toshiba Semiconductor and Storage | MOSFET N-CH 550V 4A DPAK-3 | Dotaz |
 |
IRFSL4310PBF | Infineon Technologies | MOSFET N-CH 100V 130A TO-262 | Dotaz |
 |
IPB25N06S3-25 | Infineon Technologies | MOSFET N-CH 55V 25A D2PAK | Dotaz |
 |
FQA70N15 | Fairchild/ON Semiconductor | MOSFET N-CH 150V 70A TO-3P | Dotaz |
 |
STE48NM60 | STMicroelectronics | MOSFET N-CH 650V 48A ISOTOP | Dotaz |
 |
PHP78NQ03LT,127 | NXP USA Inc. | MOSFET N-CH 25V 75A TO220AB | Dotaz |
 |
BSC205N10LS G | Infineon Technologies | MOSFET N-CH 100V 45A TDSON-8 | Dotaz |
|
BSS670S2L H6327 | Infineon Technologies | MOSFET N-CH 55V 540MA SOT23 | Dotaz |
 |
SIUD403ED-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 500MA 0806 | Dotaz |
 |
FDD8586 | Fairchild/ON Semiconductor | MOSFET N-CH 20V 35A DPAK | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog