Koupit 2SK3075(TE12L,Q) s BYCHPS
Koupit se zárukou
2SK3075(TE12L,Q)
- Part Number:
- 2SK3075(TE12L,Q)
- Výrobce:
- Toshiba Semiconductor
- Popis:
- MOSF RF N CH 30V 5A PW-X
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16580 Pieces
- Datový list:
- 2SK3075(TE12L,Q).pdf
Úvod
BYCHIPS je distribuční odrůda pro 2SK3075(TE12L,Q), máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu 2SK3075(TE12L,Q) e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Napětí - Test: | 9.6V |
|---|---|
| Napětí - Jmenovitá: | 30V |
| Transistor Type: | N-Channel |
| Dodavatel zařízení Package: | PW-X |
| Série: | - |
| Power - Výstup: | 7.5W |
| Obal: | Cut Tape (CT) |
| Paket / krabice: | TO-271AA |
| Ostatní jména: | 2SK3075(TE12LQ)CT |
| hluk Obrázek: | - |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | 2SK3075(TE12L,Q) |
| Získat: | 11.7dB |
| Frekvence: | 520MHz |
| Rozšířený popis: | RF Mosfet N-Channel 9.6V 50mA 520MHz 11.7dB 7.5W PW-X |
| Popis: | MOSF RF N CH 30V 5A PW-X |
| Jmenovitá hodnota proudu: | 5A |
| Aktuální - Test: | 50mA |
| Email: | [email protected] |
Související díly pro 2SK3075(TE12L,Q)
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
2SK3078A(TE12L,F) | Toshiba Semiconductor and Storage | FET RF N-CH 10V 470 MHZ PW-MINI | Dotaz |
 |
PTFA142401ELV4XWSA1 | Infineon Technologies | IC FET RF LDMOS 240W H-33288-2 | Dotaz |
 |
MRF8P20165WHR3 | NXP USA Inc. | FET RF 2CH 65V 2.01GHZ NI780-4 | Dotaz |
 |
PD85035STR1-E | STMicroelectronics | TRANS RF N-CH FET POWERSO-10RF | Dotaz |
|
2SK3074TE12LF | Toshiba Semiconductor and Storage | MOSF RF N CH 30V 1A PW-MINI | Dotaz |
 |
2SK3079ATE12LQ | Toshiba Semiconductor and Storage | MOSF RF N CH 10V PW-X | Dotaz |
 |
PTFA091201EV4R0XTMA1 | Infineon Technologies | RF MOSFET LDMOS 28V H-36248-2 | Dotaz |
 |
2SK4037(TE12L,Q) | Toshiba Semiconductor and Storage | MOSFET N-CH PW-X | Dotaz |
 |
MRF5S9150HSR5 | NXP USA Inc. | FET RF 68V 880MHZ NI-780S | Dotaz |
 |
2SK3068(TE24L,Q) | Toshiba Semiconductor and Storage | MOSFET N-CH 500V 12A TO220SM | Dotaz |
|
PTFB090901FAV2R0XTMA1 | Infineon Technologies | IC AMP RF LDMOS H-37265-2 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog