Koupit IXTH64N10L2 s BYCHPS
Koupit se zárukou
IXTH64N10L2
- Part Number:
- IXTH64N10L2
- Výrobce:
- IXYS Corporation
- Popis:
- MOSFET N-CH 100V 64A TO-247
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 15126 Pieces
- Datový list:
- IXTH64N10L2.pdf
Úvod
BYCHIPS je distribuční odrůda pro IXTH64N10L2, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IXTH64N10L2 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4.5V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-247 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 32 mOhm @ 32A, 10V |
| Ztráta energie (Max): | 357W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-247-3 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 14 Weeks |
| Výrobní číslo výrobce: | IXTH64N10L2 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 3620pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 100nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 100V 64A (Tc) 357W (Tc) Through Hole TO-247 |
| Drain na zdroj napětí (Vdss): | 100V |
| Popis: | MOSFET N-CH 100V 64A TO-247 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 64A (Tc) |
| Email: | [email protected] |
Související díly pro IXTH64N10L2
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IXTH60N30T | IXYS | MOSFET N-CH 300V 60A TO-247 | Dotaz |
|
IXTH60N15 | IXYS | MOSFET N-CH 150V 60A TO-247 | Dotaz |
|
IXTH6N120 | IXYS | MOSFET N-CH 1200V 6A TO-247AD | Dotaz |
|
IXTH6N90A | IXYS | MOSFET N-CH 900V 6A TO-247 | Dotaz |
 |
BUK9M85-60EX | Nexperia USA Inc. | MOSFET N-CH 60V 12.8A LFPAK | Dotaz |
|
IXTH6N80A | IXYS | MOSFET N-CH 800V 6A TO-247 | Dotaz |
|
IXTH6N100D2 | IXYS | MOSFET N-CH 1000V 6A TO247 | Dotaz |
|
IXTH60N20L2 | IXYS | MOSFET N-CH 200V 60A TO-247 | Dotaz |
|
IXTH68P20T | IXYS | MOSFET P-CH 200V 68A TO-247 | Dotaz |
|
IXTH64N65X | IXYS | MOSFET N-CH 650V 64A TO-247 | Dotaz |
|
IXTH6N50D2 | IXYS | MOSFET N-CH 500V 6A TO247 | Dotaz |
 |
SI1315DL-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 0.9A SC70-3 | Dotaz |
|
IXTH62N65X2 | IXYS | MOSFET N-CH 650V 62A TO-247 | Dotaz |
|
IXTH62N25T | IXYS | MOSFET N-CH 250V 62A TO-247 | Dotaz |
|
IXTH60N25 | IXYS | MOSFET N-CH 250V 60A TO-247 | Dotaz |
|
IXTH60N10 | IXYS | MOSFET N-CH 100V 60A TO-247 | Dotaz |
|
IXTH6N150 | IXYS | MOSFET N-CH 1500V 6A TO-247 | Dotaz |
|
IXTH6N90 | IXYS | MOSFET N-CH 900V 6A TO-247 | Dotaz |
|
IXTH67N10 | IXYS | MOSFET N-CH 100V 67A TO247AD | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers