Koupit IXTA5N50P s BYCHPS
Koupit se zárukou
IXTA5N50P
- Part Number:
- IXTA5N50P
- Výrobce:
- IXYS Corporation
- Popis:
- MOSFET N-CH 500V 4.8A D2PAK
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 15808 Pieces
- Datový list:
- IXTA5N50P.pdf
Úvod
BYCHIPS je distribuční odrůda pro IXTA5N50P, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IXTA5N50P e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 5.5V @ 50µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-263 (IXTA) |
| Série: | PolarHV™ |
| RDS On (Max) @ Id, Vgs: | 1.4 Ohm @ 2.4A, 10V |
| Ztráta energie (Max): | 89W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 8 Weeks |
| Výrobní číslo výrobce: | IXTA5N50P |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 620pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 12.6nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 500V 4.8A (Tc) 89W (Tc) Surface Mount TO-263 (IXTA) |
| Drain na zdroj napětí (Vdss): | 500V |
| Popis: | MOSFET N-CH 500V 4.8A D2PAK |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 4.8A (Tc) |
| Email: | [email protected] |
Související díly pro IXTA5N50P
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
FDMS0302S | Fairchild/ON Semiconductor | MOSFET N-CH 30V 29A | Dotaz |
 |
IXTA5N60P | IXYS | MOSFET N-CH 600V 5A D2-PAK | Dotaz |
 |
IXTK5N250 | IXYS | MOSFET N-CH 2500V 5A TO264 | Dotaz |
|
IXTA50N20P | IXYS | MOSFET N-CH 200V 50A TO-263 | Dotaz |
|
IXTA54N30T | IXYS | MOSFET N-CH 300V 54A TO-263 | Dotaz |
 |
IRF40H210 | Infineon Technologies | MOSFET N-CH 40V 100A PQFN5X6 | Dotaz |
|
IXTA50N25T | IXYS | MOSFET N-CH 250V 50A TO-263 | Dotaz |
 |
DMNH6008SPSQ-13 | Diodes Incorporated | MOSFET NCH 60V 16.5A POWERDI | Dotaz |
|
IXTA52P10P | IXYS | MOSFET P-CH 100V 52A TO-263 | Dotaz |
 |
IXFA270N06T3 | IXYS | 60V/270A TRENCHT3 HIPERFET MOSFE | Dotaz |
 |
IRFR3410TRRPBF | Infineon Technologies | MOSFET N-CH 100V 31A DPAK | Dotaz |
 |
MCQ4407-TP | Micro Commercial Co | P-CHANNEL MOSFET, SOP-8 PACKAGE | Dotaz |
 |
IRLHS6242TRPBF | Infineon Technologies | MOSFET N-CH 20V 10A PQFN | Dotaz |
 |
AOC2423 | Alpha & Omega Semiconductor Inc. | MOSFET P-CH 20V 2A 4WLCSP | Dotaz |
 |
DMG4N60SK3-13 | Diodes Incorporated | MOSFET BVDSS: 501V 650V TO252 T& | Dotaz |
|
IXTA56N15T | IXYS | MOSFET N-CH 150V 56A TO-263 | Dotaz |
 |
SIHW47N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 47A TO-247AD | Dotaz |
|
STB21NM60N | STMicroelectronics | MOSFET N-CH 600V 17A D2PAK | Dotaz |
 |
IXFT14N80P | IXYS | MOSFET N-CH 800V 14A TO-268 | Dotaz |
 |
IXFP4N85XM | IXYS | MOSFET N-CH 80V 3.5A TO220 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers